View HMT351R7BFR8C-H9_6887235.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

rev. 1.3 /dec. 2010 1 240pin ddr3 sdram registered dimm *hynix semiconductor reserves th e right to change products or specifications without notice. ddr3 sdram registered dimm based on 2gb b-die hmt325r7bfr8c hmt351r7bfr8c hmt351r7bfr4c hmt31gr7bfr8c hmt31gr7bfr4c hmt42gr7bmr4c
rev. 1.3 / dec. 2010 2 revision history revision no. history draft date remark 0.1 initial release jan.2010 preliminary 0.2 added idd specification feb.2010 1.0 dimm outline corrected jul.2010 1.1 dimm outline corrected aug.2010 1.2 added 1600 speed supports nov.2010 1.3 dimm outline corrected dec.2010
rev. 1.3 / dec. 2010 3 description hynix registered ddr3 sdram dimms (registered doub le data rate synchronous dram dual in-line memory modules) are low power, high-speed oper ation memory modules that use hynix ddr3 sdram devices. these registered sdram dimms are intended for use as main memory when installed in systems such as servers and workstations. features ? power supply: vdd=1.5v (1.425v to 1.575v) ? vddq = 1.5v (1.425v to 1.575v) ? vddspd=3.0v to 3.6v ? functionality and operations comply with the ddr3l sdram datasheet ? 8 internal banks ? data transfer rates: pc3-12800, pc3-10600, pc3-8500 ? bi-directional differential data strobe ? 8 bit pre-fetch ? burst length (bl) switch on-the-fly bl8 or bc4(burst chop) ? supports ecc error correction and detection ? on-die termination (odt) ? temperature sensor with integrated spd * this product is in compliance with the rohs directive. ordering information * in order to uninstall fdhs, pl ease contact sales administrator part number density organization component composition # of ranks fdhs hmt325r7bfr8c-g7/h9/pb 2gb 256mx72 256mx8(h5tq2g83bfr)*9 1 x hmt351r7bfr8c-g7/h9/pb 4gb 512mx72 256mx8(h5tq2g83bfr)*18 2 x hmt351r7bfr4c-g7/h9/pb 4gb 5 12mx72 512mx4(h5tq2g43bfr)*18 1 x hmt31gr7bfr8c-g7/h9/pb 8gb 1 gx72 256mx8(h5tq2g83bfr)*36 4 o hmt31gr7bfr4c-g7/h9/pb 8gb 1 gx72 512mx4(h5tq2g43bfr)*36 2 o hmt42gr7bmr4c-g7/h9/pb 16gb 2g x72 ddp 1gx4(h5tq4g43bmr)*36 4 o
rev. 1.3 / dec. 2010 4 key parameters speed grade address table mt/s grade tck (ns) cas latency (tck) trcd (ns) trp (ns) tras (ns) trc (ns) cl-trcd-trp ddr3-1066 -g7 1.875 7 13.125 13.125 37.5 50.625 7-7-7 ddr3-1333 -h9 1.5 9 13.5 13.5 36 49.5 9-9-9 ddr3-1600 -pb 1.25 11 13.75 13.75 35 48.75 11-11-11 grade frequency [mhz] remark cl6 cl7 cl8 cl9 cl10 cl10 -g7 800 1066 1066 -h9 800 1066 1066 1333 1333 -pb 800 1066 1066 1333 1333 1600 2gb(1rx8) 4gb(2rx8) 4gb(1rx4) 8gb(4rx8) 8gb(2rx4) 16gb(4rx4) refresh method 8k/64ms 8k/64ms 8k/64ms 8k/64ms 8k/64ms 8k/64ms row address a0-a13 a0-a13 a0-a13 a0-a13 a0-a13 a0-a13 column address a0-a9 a0-a9 a0-a9,a11 a0-a9 a0-a9,a11 a0-a9,a11 bank address ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 page size 1kb1kb1kb1kb1kb1kb
rev. 1.3 / dec. 2010 5 pin descriptions pin name description num ber pin name description num ber ck0 clock input, positive line 1 odt[1:0] on die termination inputs 2 ck0 clock input, negative line 1 dq[63:0] data input/output 64 ck1 clock input, positive line 1 cb[ 7:0] data check bits input/output 8 ck1 clock input, negative lin e 1 dqs[8:0] data strobes 9 cke[1:0] clock enables 2 dqs[8:0] data strobes, negative line 9 ras row address strobe 1 dm[8:0]/ dqs[17:9], tdqs[17:9] data masks / data strobes, termination data strobes 9 cas column address strobe 1 dqs[17:9] , tdqs[17:9] data strobes, negative line, termination data strobes 9 we write enable 1 event reserved for optional hardware temperature sensing 1 s [3:0] chip selects 4 test memory bus test tool (not con- nected and not usable on dimms) 1 a[9:0],a11, a[15:13] address inputs 14 reset register and sdram control pin 1 a10/ap address input/autoprecharge 1 v dd power supply 22 a12/bc address input/burst chop 1 v ss ground 59 ba[2:0] sdram bank addresses 3 v refdq reference voltage for dq 1 scl serial presence detect (spd) clock input 1 v refca reference voltage for ca 1 sda spd data input/output 1 v tt termination voltage 4 sa[2:0] spd address inputs 3 v ddspd spd power 1 par_in parity bit for the address and control bus 1 err_out parity error found on the address and control bus 1
rev. 1.3 / dec. 2010 6 input/output functional descriptions symbol type polarity function ck0 in positive line positive line of the differential pair of system clock inputs that drives input to the on- dimm clock driver. ck0 in negative line negative line of the differential pair of system clock inputs that drives the input to the on-dimm clock driver. ck1 in positive line terminated but not used on rdimms. ck1 in negative line terminated but not used on rdimms. cke[1:0] in active high cke high activates, and cke low deactivates internal clock signal s, and device input buffers and output drivers of the sdra ms. taking cke low provides precharge power-down and self refres h operation (all banks idle), or active power down (row active in any bank) s [3:0] in active low enables the command decoders for the asso ciated rank of sdram when low and dis- ables decoders when high. when decoders are disabled, new commands are ignored and previous operations continue. other combinations of these input signals perform unique functions, including disabling all outputs (except cke and odt) of the register(s) on the dimm or accessing internal control words in the register device(s). for modules with two registers, s[3:2] operate similarly to s[1:0] for the second set of register out- puts or register control words. odt[1:0] in active high on-die termination control signals r as , cas , we in active low when sampled at the positive rising edge of the clock, cas , ras , and we define the operation to be executed by the sdram. v refdq supply reference voltage fo r dq0-dq63 and cb0-cb7. v refca supply reference voltage for a0-a15, ba0-ba2, ras , cas , we , s0 , s1 , cke0, cke1, par_in, odt0 and odt1. ba[2:0] in ? selects which sdram bank of eight is activated. ba0 - ba2 define to which bank an active, read, write or precharge command is being applied. bank address also determines mode register is to be accessed during an mrs cycle. a[15:13, 12/bc ,11, 10/ap,[9:0] in ? provided the row address for active commands and the column address and auto precharge bit for read/write commands to select one location out of the mem- ory array in the respective bank. a10 is sampled during a precharge command to deter- mine whether the precharge applies to one bank (a10 low) or all banks (a10 high). if only one bank is to be precharged, the bank is selected by ba. a12 is also utilized for bl 4/8 identification for ??bl on the fly?? during cas command. the address inputs also pro- vide the op-code during mode register set commands. dq[63:0], cb[7:0] i/o ? data and check bi t input/output pins dm[8:0] in active high masks write data when high, issued concurrently with input data. v dd , v ss supply power and ground for the ddr sdram input buffers and core logic. v tt supply termination voltage for address/command/control/clock nets.
rev. 1.3 / dec. 2010 7 dqs[17:0] i/o positive edge positive line of the differential data strobe for input and output data. dqs[17:0] i/o negative edge negative line of the differential data strobe for input and output data. tdqs[17:9] tdqs[17:9] out tdqs/tdqs is applicable for x8 drams only. when enabled via mode register a11=1 in mr1,dram will enable the same termination resistance function on tdqs/tdqs that is applied to dqs/dqs . when disabled via mode regist er a11=0 in mr1, dm/tdqs will provide the data mask function and tdqs is not used. x4/x16 drams must disable the tdqs function via mode register a11=0 in mr1 sa[2:0] in ? these signals are tied at the system planar to either v ss or v ddspd to configure the serial spd eeprom address range. sda i/o ? this bidirectional pin is used to transfer data into or out of the spd eeprom. a resistor must be connected from the sda bus line to v ddspd on the system pl anar to act as a pullup. scl in ? this signal is used to clock data into and out of the spd eeprom. a resistor may be con- nected from the scl bus time to v ddspd on the system planar to act as a pullup. event out (open drain) active low this signal indicates that a thermal event has been detected in the thermal sensing device.the system should guarantee the electrical level requirement is met for the event pin on ts/spd part. no pull-up resister is provided on dimm. v ddspd supply serial eeprom positive power supply wired to a separate power pin at the connector which supports from 3.0 volt to 3.6 volt (nominal 3.3v) operation. reset in the reset pin is connected to the reset pin on the register and to the reset pin on the dram. par_in in parity bit for the address and control bus. (?1 ?: odd, ?0 ?: even) err_out out (open drain) parity error detected on the address and cont rol bus. a resistor may be connected from err_out bus line to v dd on the system planar to act as a pull up. test used by memory bus analysis tools (unused (nc) on memory dimms) symbol type polarity function
rev. 1.3 / dec. 2010 8 pin assignments pin # front side (left 1?60) pin # back side (right 121?180) pin # front side (left 61?120) pin # back side (right 181?240) 1v ref dq 121 v ss 61 a2 181 a1 2 v ss 122 dq4 62 v dd 182 v dd 3 dq0 123 dq5 63 nc, ck1 183 v dd 4 dq1 124 v ss 64 nc, ck1 184 ck0 5 v ss 125 dm0,dqs9, tdqs9 65 v dd 185 ck0 6dqs0 126 nc,dqs9 , tdqs9 66 v dd 186 v dd 7 dqs0 127 v ss 67 v ref ca 187 event , nc 8 v ss 128 dq6 68 par_in, nc 188 a0 9 dq2 129 dq7 69 v dd 189 v dd 10 dq3 130 v ss 70 a10 / ap 190 ba1 11 v ss 131 dq12 71 ba0 191 v dd 12 dq8 132 dq13 72 v dd 192 ras 13 dq9 133 v ss 73 we 193 s0 14 v ss 134 dm1,dqs10, tdqs10 74 cas 194 v dd 15 dqs1 135 nc,dqs10 , tdqs10 75 v dd 195 odt0 16 dqs1 136 v ss 76 s1 , nc 196 a13 17 v ss 137 dq14 77 odt1, nc 197 v dd 18 dq10 138 dq15 78 v dd 198 s3 , nc 19 dq11 139 v ss 79 s2 , nc 199 v ss 20 v ss 140 dq20 80 v ss 200 dq36 21 dq16 141 dq21 81 dq32 201 dq37 22 dq17 142 v ss 82 dq33 202 v ss 23 v ss 143 dm2,dqs11, tdqs11 83 v ss 203 dm4,dqs13, tdqs13 24 dqs2 144 nc,dqs11 , tdqs11 84 dqs4 204 nc,dqs13 , tdqs13 25 dqs2 145 v ss 85 dqs4 205 v ss 26 v ss 146 dq22 86 v ss 206 dq38 27 dq18 147 dq23 87 dq34 207 dq39 28 dq19 148 v ss 88 dq35 208 v ss 29 v ss 149 dq28 89 v ss 209 dq44 30 dq24 150 dq29 90 dq40 210 dq45 31 dq25 151 v ss 91 dq41 211 v ss nc = no connect; rfu = reserved future use
rev. 1.3 / dec. 2010 9 32 v ss 152 dm3,dqs12, tdqs12 92 v ss 212 dm5,dqs14, tdqs14 33 dqs3 153 nc,dqs12 , tdqs12 93 dqs5 213 nc,dqs14 , tdqs14 34 dqs3 154 v ss 94 dqs5 214 v ss 35 v ss 155 dq30 95 v ss 215 dq46 36 dq26 156 dq31 96 dq42 216 dq47 37 dq27 157 v ss 97 dq43 217 v ss 38 v ss 158 cb4, nc 98 v ss 218 dq52 39 cb0, nc 159 cb5, nc 99 dq48 219 dq53 40 cb1, nc 160 v ss 100 dq49 220 v ss 41 v ss 161 nc,dm8,dqs17, tdqs17 101 v ss 221 dm6,dqs15, tdqs15 42 dqs8 162 nc,dqs17 , tdqs17 102 dqs6 222 nc,dqs15 , tdqs15 43 dqs8 163 v ss 103 dqs6 223 v ss 44 v ss 164 cb6, nc 104 v ss 224 dq54 45 cb2, nc 165 cb7, nc 105 dq50 225 dq55 46 cb3, nc 166 v ss 106 dq51 226 v ss 47 v ss 167 nc(test) 107 v ss 227 dq60 48 vtt, nc 168 reset 108 dq56 228 dq61 key key 109 dq57 229 v ss 49 vtt, nc 169 cke1, nc 110 v ss 230 dm7,dqs16, tdqs16 50 cke0 170 v dd 111 dqs7 231 nc,dqs16 , tdqs16 51 v dd 171 a15 112 dqs7 232 v ss 52 ba2 172 a14 113 v ss 233 dq62 53 err_out , nc 173 v dd 114 dq58 234 dq63 54 v dd 174 a12 / bc 115 dq59 235 v ss 55 a11 175 a9 116 v ss 236 v ddspd 56 a7 176 v dd 117 sa0 237 sa1 57 v dd 177 a8 118 scl 238 sda 58 a5 178 a6 119 sa2 239 v ss 59 a4 179 v dd 120 v tt 240 v tt 60 v dd 180 a3 pin # front side (left 1?60) pin # back side (right 121?180) pin # front side (left 61?120) pin # back side (right 181?240) nc = no connect; rfu = reserved future use
rev. 1.3 / dec. 2010 10 registering clock driver specifications capacitance values input & output timing requirements symbol parameter conditions min typ max unit c i input capacitance, data inputs 1.5 - 2.5 pf input capacitance, ck, ck , fbin, fbin 2 - 3 pf input capacitance, ck, ck , fbin, fbin (ddr3-1600) 1.5 - 2.5 pf c ir input capacitance, reset , mirror, qcsen v i = v dd or gnd; v dd = 1.5v --3pf symbol parameter conditions ddr3-800 1066/1333/1600 unit min max f clock input clock frequency application frequency 300 670 mhz f test input clock frequency test frequency 70 300 mhz t su setup time input valid before ck/ck 100 - ps t h hold time input to remain valid after ck/ck 175 - ps t pdm propagation delay, single- bit switching ck/ck to output 0.65 1.0 ns t dis output disable time (1/2- clock prelaunch) yn/yn to output float 0.5 tck + tqsk1(min) -ps t en output enable time (1/2- clock prelaunch) output driving to yn/yn 0.5 tck - tqsk1(max) -ps
rev. 1.3 / dec. 2010 11 on dimm thermal sensor the ddr3 sdram dimm temperature is monitored by in tegrated thermal sensor. the integrated thermal sensor comply with jedec ?tse2002av, serial presence detect with temperature sensor?. connection of thermal sensor temperature-to-digital conversion performance parameter condition min typ max unit temperature sensor accuracy (grade b) active range, 75c < t a < 95c - 0.5 1.0 c monitor range, 40c < t a < 125c - 1.0 2.0 c -20c < t a < 125c - 2.0 3.0 c resolution 0.25 c event scl sda sa0 sa1 sa2 event scl sda sa0 sa1 sa2 spd with integrated ts
rev. 1.3 / dec. 2010 12 functional block diagram 2gb, 256mx72 modu le(1rank of x8) cb[7:0] dqs8 dqs8 dm8/dqs17 dqs17 rrasa rcasa rs0a rwea pck0a pck0a rcke0a rodt0a a[n:o]a vtt dq[31:24] dqs3 dqs3 dm3/dqs12 dqs12 dq[23:16] dqs2 dqs2 dm2/dqs11 dqs11 dq[15:8] dqs1 dqs1 dm1/dqs10 dqs10 dq[7:0] dqs 0 dqs 0 dm 0 /dqs9 dqs9 dqs dqs tdqs tdqs d8 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d3 dq [7:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[n:o] dqs dqs tdqs tdqs d2 dq [7:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[n:o] dqs dqs tdqs tdqs d1 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d0 dq [7:0] zq ras cas cs we ck ck cke odt a [n :o]/ba[n:o] dq[39:32] dqs4 dqs4 dm4/dqs13 dqs13 rrasb rcasb rs0b rweb pck0b pck0b rcke0b rodt0b a[n:o]b vtt dq[47:40] dqs5 dqs5 dm5/dqs14 dqs14 dq[55:48] dqs6 dqs6 dm6/dqs15 dqs15 dq[63:56] dqs7 dqs7 dm7/dqs16 dqs16 dqs dqs tdqs tdqs d4 dq [7:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dqs dqs tdqs tdqs d5 dq [7:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[n:o] dqs dqs tdqs tdqs d6 dq [7:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[n:o] dqs dqs tdqs tdqs d7 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] /ba[n:o]a /ba[n:o]b s0 s1 ba[n:0] a[n:0] ras cas we cke0 odt0 ck0 ck0 par_in rs0a cs 0: sdrams d[3:0], d8 rs0b cs 0: sdrams d[7:4] rba[n:0]a ba[n:0]: sdrams d[3:0], d8 rrasa ras : sdrams d[7:4] rba[n:0]a ba[n:0]: sdrams d[7:4] ra[n:0]a a[n:0]: sdrams d[7:4] ra[n:0]a a[n:0]: sdrams d[3:0], d8 rrasa ras : sdrams d[3:0], d8 rcasa cas : sdrams d[7:4] rcasa cas : sdrams d[3:0], d8 rwea we : sdrams d[7:4] rwea we : sdrams d[3:0], d8 rcke0b cke0: sdrams d[7:4] rcke0a cke0: sdrams d[3:0], d8 rodt0b odt0: sdrams d[7:4] rodt0a odt0: sdrams d[3:0], d8 pck0b ck: sdrams d[7:4] pck0a ck: sdrams d[3:0], d8 pck0b ck : sdrams d[7:4] pck0a ck : sdrams d[3:0], d8 err_out oerr reset rst rst : sdrams d[8:0] s[3:2], cke1, odt1, are nc (unused regi ster inputs odt1 and cke1 have a 330 ? resistor to ground 1: 2 r e g i s t e r / p d0?d8 v dd v tt v ddspd d0?d8 vrefdq spd vrefca v ss d0?d8 d0?d8 note: 1.dq-to-i/o wiring may be changed within byte. 2.zq resistors are 240 ? 1%.for all other resistor values refer to the appropriate wiring diagram. vddspd event scl sda sa0 spd with integrated ts sa1 sa2 vss vddspd event scl sda sa0 sa1 sa2 vss plan to use spd with integrated ts of class b and might be changed on customer?s requests. for more details of spd and thermal sensor, please contact local hynix sales representative 120 ? 1% ck0 ck0 120 ? 1% l l
rev. 1.3 / dec. 2010 13 4gb, 512mx72 module(2 rank of x8) - page1 dqs dqs tdqs tdqs d17 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] rrasa rcasa rs0a rwea pck0a pck0a rcke0a rodt0a a[n:o]a vtt /ba[n:o]a rs1a pck1a pck1a rcke1a rodt1a dq[31:24] dqs3 dqs3 dm3/dqs12 dqs12 dqs dqs tdqs tdqs d3 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d12 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dq[23:16] dqs2 dqs2 dm2/dqs11 dqs11 dqs dqs tdqs tdqs d2 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d11 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dq[15:8] dqs1 dqs1 dm1/dqs10 dqs10 dqs dqs tdqs tdqs d1 dq [7:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[n:o] dqs dqs tdqs tdqs d10 dq [7:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[n:o] dq[7:0] dqs0 dqs0 dm0/dqs9 dqs9 dqs dqs tdqs tdqs d0 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d9 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] cb[7:0] dqs8 dqs8 dm8/dqs17 dqs17 dqs dqs tdqs tdqs d8 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d13 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] rrasb rcasb rs0b rweb pck0b pck0b rcke0b rodt0b a[n:o]b vtt /ba[n:o]b rs1b pck1b pck1b rcke1b rodt1b dq[47:40] dqs5 dqs5 dm5/dqs14 dqs14 dqs dqs tdqs tdqs d5 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d14 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dq55:48] dqs6 dqs6 dm6/dqs15 dqs15 dqs dqs tdqs tdqs d6 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d15 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dq[63:56] dqs7 dqs7 dm7/dqs16 dqs16 dqs dqs tdqs tdqs d7 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs tdqs tdqs d16 dq [7:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[n:o] dq[39:32] dqs4 dqs4 dm4/dqs13 dqs13 dqs dqs tdqs tdqs d4 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d0?d17 v dd d0?d17 v tt v ddspd d0?d17 vrefdq serial pd vrefca v ss d0?d17 d0?d17 note: 1. dq-to-i/o wiring may be changed within a byte. 2. unless otherwise noted, resistor values are 15 ?5 %. 3. zq resistors are 240 ?1 %. for all other resistor values refer to the appropriate wiring diagram. 4. see the wiring diagrams for al l resistors associated with the command, address and control bus. vddspd event scl sda sa0 spd with integrated ts sa1 sa2 vss vddspd event scl sda sa0 sa1 sa2 vss plan to use spd with integrated ts of class b and might be changed on customer?s requests. for more details of spd and thermal sensor, please contact local hynix sales representative
rev. 1.3 / dec. 2010 14 4gb, 512mx72 module(2 rank of x8) - page2 s0 s1 ba[n:0] a[n:0] ras cas we cke0 odt0 ck0 ck0 par_in rs0a cs 0: sdrams d[3:0], d8 rs0b cs 0: sdrams d[7:4] rs1a cs1 : sdrams d[12:9], d17 rrasb ras : sdrams d[7:4], d[16:13] rs1b cs1 : sdrams d[16:13] rba[n:0]b ba[n:0]: sdrams d[7:4], d[16:13] rba[n:0]a ba[n:0]: sdrams d[3:0], d[12:8], d17 rrasa ras : sdrams d[3:0], d[12:8], d17 rcasb cas : sdrams d[7:4], d[16:13] rcasa cas : sdrams d[3:0], d[12:8], d17 rweb we : sdrams d[7:4], d[16:13] rwea we : sdrams d[3:0], d[12:8], d17 rcke0b cke0: sdrams d[7:4] rcke0a cke0: sdrams d[3:0], d8 rodt0b odt0: sdrams d[7:4] rodt0a odt0: sdrams d[3:0], d8 pck0b ck: sdrams d[7:4] pck0a ck: sdrams d[3:0], d8 pck 0b ck : sdrams d[7:4] pck 0a ck : sdrams d[3:0], d8 err_out oerr reset rst rst : sdrams d[17:0] 1:2 r e g i s t e r / p rcke1b cke1: sdrams d[16:13] rcke1a cke1: sdrams d[12:9], d17 odt1 rodt1a odt1: sdrams d[16:13] rodt1a odt1: sdrams d[12:9], d17 cke1 ra[n:0]b a[n:0]: sdrams d[7:4], d[16:13] ra[n:0]a a[n:0]: sdrams d[3:0], d[12:8], d17 pck1b ck: sdrams d[16:13] pck1a ck: sdrams d[12:9], d17 pck 1b ck : sdrams d[16:13 ] pck 1a ck: sdrams d[12:9], d17 l l * s[3:2], ck1 and ck1 are nc s[3:2] nc 120 ? 5% ck1 ck1 120 ? 5%
rev. 1.3 / dec. 2010 15 4gb, 512mx72 module(1 rank of x4) - page1 rrasa rcasa rs0a rwea pck0a pck0a rcke0a rodt0a a[o:n]a vtt /ba[o:n]a cb[3:0] dqs8 dqs8 dqs dqs dm d8 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] cb[7:4] dqs17 dqs17 vss dqs dqs dm d17 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss dq[27:24] dqs3 dqs3 dqs dqs dm d3 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dq[31:28] dqs12 dqs12 vss dqs dqs dm d12 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss dq[19:16] dqs2 dqs2 dqs dqs dm d2 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dq23:20] dqs11 dqs11 vss dqs dqs dm d11 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss dq[11;8] dqs1 dqs1 dqs dqs dm d1 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dq[15:12] dqs10 dqs10 vss dqs dqs dm d10 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss dq[3:0] dqs0 dqs0 dqs dqs dm d0 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dq[7:4] dqs9 dqs9 vss dqs dqs dm d9 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss rrasb rcasb rs0b rweb pck0b pck0b rcke0b rodt0b a[o:n]b vtt /ba[o:n]b dq[35:32] dqs4 dqs4 dqs dqs dm d4 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dq[39:36] dqs13 dqs13 vss dqs dqs dm d13 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss dq[43:40] dqs5 dqs5 dqs dqs dm d5 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dq[47:44] dqs14 dqs14 vss dqs dqs dm d14 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss dq[51:48] dqs6 dqs6 dqs dqs dm d6 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dq[55;52] dqs15 dqs15 vss dqs dqs dm d15 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss dq[59:56] dqs7 dqs7 dqs dqs dm d7 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] dq[63:60] dqs16 dqs16 vss dqs dqs dm d16 dq [3:0] zq ras cas cs we ck ck cke odt a[o:n]/ba[o:n] vss vss vss d0?d17 v dd d0?d17 v tt v ddspd d0?d17 vrefdq spd vrefca v ss d0?d17 d0?d17 note: 1. dq-to-i/o wiring may be changed within a nibble. 2. unless otherwise noted, resistor values are 15%. 3. see the wiring diagrams for all resistors associated with the com- mand, address and control bus. 4. zq resistors are 240%. for all other resistor values refer to the appro- priate wiring diagram. ? 1 ? ? 5 ? vddspd event scl sda sa0 spd with integrated ts sa1 sa2 vss vddspd event scl sda sa0 sa1 sa2 vss plan to use spd with integrated ts of class b and might be changed on customer?s requests. for more details of spd and thermal sensor, please contact local hynix sales representative
rev. 1.3 / dec. 2010 16 4gb, 512mx72 module(1 rank of x4) - page2 s0 s1 ba[n:0] a[n:0] ras cas we cke0 odt0 ck0 ck0 par_in rs0a cs 0: sdrams d[3:0], d[12:8], d17 rs0b cs 0: sdrams d[7:4], d[16:13] rrasb ras : sdrams d[7:4], d[16:13] rba[n:0]b ba[n:0]: sdrams d[7:4], d[16:13] rba[n:0]a ba[n:0]: sdrams d[3:0], d[12:8], d17 rrasa ras : sdrams d[3:0], d[12:8], d17 rcasb cas : sdrams d[7:4], d[16:13] rcasa cas : sdrams d[3:0], d[12:8], d17 rweb we : sdrams d[7:4], d[16:13] rwea we : sdrams d[3:0], d[12:8], d17 rcke0b cke0: sdrams d[7:4], d[16:13] rcke0a cke0: sdrams d[3:0], d[12:8], d17 rodt0b odt0: sdrams d[7:4], d[16:13] rodt0a odt0: sdrams d[3: 0], d[12:8]. d17 pck0b ck: sdrams d[7:4] pck0a ck: sdrams d[3:0], d8 pck 0b ck : sdrams d[7:4] pck 0a ck : sdrams d[3:0], d8 err_out oerr reset rst rst : sdrams d[17:0] 1:2 r e g i s t e r / p ra[n:0]b a[n:0]: sdrams d[7:4], d[16:13] ra[n:0]a a[n:0]: sdrams d[3:0], d[12:8], d17 l l * s[3:2], cke1, odt1, ck1 and ck1 are nc (unused register inputs odt1 and cke1 have a 330 resistor to ground.) ? rs1a cs1 : sdrams d[12:9], d17 rs1b cs1 : sdrams d[16:13]
rev. 1.3 / dec. 2010 17 8gb, 1gx72 module(4ra nk of x8) - page1 wras wcas cs 0 wwe pck0 pck 0 wcke0 wodt0 wa[n:0] vtt wba[n:0] dq[7:0] dqs0 dqs 0 dm0/tdqs9 tdqs9 dqs dqs tdqs tdqs u2 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] cs 1 pck0 pck 0 wcke01 vdd dqs dqs tdqs tdqs u11 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] cs 2 pck2 pck 2 wcke0 wodt1 dqs dqs tdqs tdqs u20 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] cs 3 pck2 pck 2 wcke1 vdd dqs dqs tdqs tdqs u29 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dq[15:8] dqs1 dqs 1 dm1/tdqs10 tdqs10 dqs dqs tdqs tdqs u3 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u12 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u21 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u30 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dq[32:16] dqs2 dqs 2 dm2/tdqs11 tdqs11 dqs dqs tdqs tdqs u4 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u13 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u22 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u31 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dq[31:24] dqs3 dqs 3 dm3/tdqs12 tdqs12 dqs dqs tdqs tdqs u5 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u14 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u23 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u32 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] cb[7:0] dqs8 dqs 8 dm8/tdqs17 tdqs17 dqs dqs tdqs tdqs u6 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u15 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u24 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u33 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o]
rev. 1.3 / dec. 2010 18 8gb, 1gx72 module(4ra nk of x8) - page2 wras wcas cs 0 wwe pck0 pck 0 wcke0 wodt0 wa[n:0] wba[n:0] dq[39:32] dqs4 dqs 4 dm4/tdqs13 tdqs13 dqs dqs tdqs tdqs u7 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] cs 1 pck0 pck 0 wcke01 vdd dqs dqs tdqs tdqs u16 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] cs 2 pck2 pck 2 wcke0 wodt1 dqs dqs tdqs tdqs u25 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] cs 3 pck2 pck 2 wcke1 vdd dqs dqs tdqs tdqs u34 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dq[47:40] dqs5 dqs 5 dm5/tdqs14 tdqs14 dqs dqs tdqs tdqs u8 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u17 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u26 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u35 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dq[55:48] dqs6 dqs 6 dm6/tdqs15 tdqs15 dqs dqs tdqs tdqs u9 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u18 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u27 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u36 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dq[31:24] dqs3 dqs 3 dm3/tdqs12 tdqs12 dqs dqs tdqs tdqs u10 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u19 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u28 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] dqs dqs tdqs tdqs u37 dq [7:0] zq ras cas cs we ck ck cke odt a[n:o] ba[n:o] vtt u1-u37 v dd v tt v ddspd u1-u37 v refdq serial pd v refca v ss u1?u37 u1-u37 notes: 1. dq-to-i/o wiring may be changed within a byte. 2. see wiring diagrams for resistor values. 3. zq pins of each sdram are connected to individual rzq resistors (240+/-1%) ohms. vddspd event scl sda sa0 spd with integrated ts sa1 sa2 vss vddspd event scl sda sa0 sa1 sa2 vss plan to use spd with integrated ts of class b and might be changed on customer?s requests. for more details of spd and thermal sensor, please contact local hynix sales representative
rev. 1.3 / dec. 2010 19 8gb, 1gx72 module(4ra nk of x8) - page3 s0 s1 ba[n:0] a[n:0] ras cas we cke0 odt0 ck0 ck0 par_in cs 0 cs 0: sdrams u[10:2] cs 1 cs 1: sdrams u[19:11] cs 2 cs 2: sdrams u[28:20] eras ras : sdrams u[10:7], u[19:16], u[28:25], u[37:34] cs 3 cs 3: sdrams u[37:29] eba[n:0] ba[n:0]: sdrams u[10:7], u[19:16], u[28:25], u[37:34] wba[n:0] ba[n:0]: sdrams u[6:2], u[15:11], u[24:20], u[33:29] wras ras : sdrams u[6:2], u[15:1 1], u[24:20], u[33:29] ecas cas : sdrams u[10:7], u[19:1 6], u[28:25], u[37:34] wcas cas : sdrams u[6:2], u[15:11], u[24:20], u[33:29] ewe we : sdrams u[10:7], u[19:16], u[28:25], u[37:34] wwe we : sdrams u[6:2], u[15:11], u[24:20], u[33:29] ecke0 cke0: sdrams u[10:7], u[28:25] wcke0 cke0: sdrams u[6:2], u[24:20] eodt0 odt0: sdrams u[10:7] wodt0 odt0: sdrams u[6:2] pck1 ck: sdrams u[10:7], u[28:25] pck0 ck: sdrams u[6:2], u[15:11] pck 1 ck : sdrams u[10:7], u[28:25] pck 0 ck : sdrams u[6:2], u[15:11] err_out reset rst rst : sdrams u[37:2] 1:2 r e g i s t e r / p ecke1 cke1: sdrams u[19:16], u[37:34] wcke1 cke1: sdrams u[15:11], u[33:29] odt1 eodt0 odt1: sdrams u[28:25] wodt0 odt1: sdrams u[24:20] cke1 ea[n:0] a[n:0]: sdrams u[10:7], u[ 19:16], u[28:25], u[37:34] wa[n:0] a[n:0]: sdrams u[6:2], u[15:11], u[24:20], u[33:29] pck3 ck: sdrams u[19:16], u[37:34] pck2 ck: sdrams u[24:20], u[33:29] pck 3 ck : sdrams u[19:16], u[37:34] pck 2 ck: sdrams u[24:20], u[33:29] l l ck1 ck1 120 ? 5% s2 s3
rev. 1.3 / dec. 2010 20 8gb, 1gx72 module(2ra nk of x4) - page1 rrasa rcasa rs0a rwea pck0a pck0a rcke0a rodt0a a[o:n]a /ba[o:n]a cb[7:4] dqs17 dqs17 dqs dqs dm d17 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d35 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[31:28] dqs12 dqs12 dqs dqs dm d12 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs d30 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[23:20] dqs11 dqs11 dqs dqs dm d11 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d29 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[15:12] dqs10 dqs10 dqs dqs dm d10 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d28 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[3:0] dqs0 dqs0 dqs dqs dm d0 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d18 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss vtt cb[3:0] dqs8 dqs8 dqs dqs dm d8 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d26 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[27:24] dqs3 dqs3 dqs dqs dm d3 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs d21 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[19:16] dqs2 dqs2 dqs dqs dm d2 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d20 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[11:8] dqs1 dqs1 dqs dqs dm d1 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d19 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[7:4] dqs9 dqs9 dqs dqs dm d9 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d27 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss rs 1a rcke1a r0dt1a dm dm vtt rrasa rcasa rs0a rwea pck0a pck0a rcke0a rodt0a a[o:n]a /ba[o:n]a rs 1a rcke1a r0dt1a pck1 a pck1a pck1 a pck1a
rev. 1.3 / dec. 2010 21 8gb, 1gx72 module(2ra nk of x4) - page2 d0?d35 v dd d0?d35 v tt v ddspd d0?d35 vrefdq spd vrefca v ss d0?d35 d0?d35 note: 1. dq-to-i/o wiring may be changed within a nibble. 2. see wiring diagrams for all resistors values. 3. zq pins of each sdram are connected to individual rzq resistors (240+/-1%) ohms. vddspd event scl sda sa0 spd with integrated ts sa1 sa2 vss vddspd event scl sda sa0 sa1 sa2 vss rrasb rcasb rs0b rweb pck0b pck0b rcke0b rodt0b a[n:o]b /ba[n:o]b dq[47:44] dqs14 dqs14 dqs dqs dm d14 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d32 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dqs4 dqs4 dqs dqs dm d4 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs d22 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dqs16 dqs16 dqs dqs dm d16 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d34 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dqs7 dqs7 dqs dqs dm d7 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d25 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss vtt dq[39:36] dqs13 dqs13 dqs dqs dm d13 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d31 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[43:40] dqs5 dqs5 dqs dqs dm d5 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs d23 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[55:52] dqs15 dqs15 dqs dqs dm d15 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d33 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss dq[51:48] dqs6 dqs6 dqs dqs dm d6 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d24 dq [3:0] ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss rs 1b rcke1b r0dt1b dm dm vtt rrasb rcasb rs0b rweb pck0b pck0b rcke0b rodt0b a[n:o]b /ba[n:o]b rs 1b rcke1b r0dt1b pck1 b pck1b pck1 b pck1b dq[35:32] dq[63:60] dq[59:56] plan to use spd with integrated ts of class b and might be changed on customer?s requests. for more details of spd and thermal sensor, please contact local hynix sales representative
rev. 1.3 / dec. 2010 22 8gb, 1gx72 module(2ra nk of x4) - page3 s0 s1 ba[n:0] a[n:0] ras cas we cke0 odt0 ck0 ck0 par_in rs0a cs 0: sdrams d[3:0], d[12:8], d17 rs0b cs 0: sdrams d[7:4], d[16:13] rs1a cs1 : sdrams d[21:18], d[30:26], d35 rrasb ras : sdrams d[7:4], d[16:13], d[25:22], d[34:31] rs1b cs1 : sdrams d[25:22], d[34:31] rba[n:0]b ba[n:0]: sdrams d[7:4], d[16:13], d[25:22], d[34:31] rba[n:0]a ba[n:0]: sdrams d[3:0], d[ 12:8], d[21:17], d[30:26], d35 rrasa ras : sdrams d[3:0], d[12:8], d[21:17], d[30:26], d35 rcasb cas : sdrams d[7:4], d[16:1 3], d[25:22], d[34:31] rcasa cas : sdrams d[3:0], d[12:8], d[21:17], d[30:26], d35 rweb we : sdrams d[7:4], d[16:13], d[25:22], d[34:31] rwea we : sdrams d[3:0], d[12:8], d[21:17], d[30:26], d35 rcke0b cke0: sdrams d[7:4], d[16:13] rcke0a cke0: sdrams d[3: 0], d[12:8], d17 rodt0b odt0: sdrams d[7:4], d[16:13] rodt0a odt0: sdrams d[3:0], d[12:8], d17 pck0b ck: sdrams d[7:4], d[16:13] pck0a ck: sdrams d[3:0], d[12:8], d17 pck 0b ck : sdrams d[7:4], d[16:13] pck 0a ck : sdrams d[3:0], d[12:8], d17 err_out reset rst rst : sdrams d[35:0] 1:2 r e g i s t e r / p rcke1b cke1: sdrams d[25:22], d[34:31] rcke1a cke1: sdrams d[21:18], d[30:26], d35 odt1 rodt1a odt1: sdrams d[25:22], d[34:31] rodt1a odt1: sdrams d[21 :18], d[30:26], d35 cke1 ra[n:0]b a[n:0]: sdrams d[7:4], d[ 16:13], d[25:22], d[34:31] ra[n:0]a a[n:0]: sdrams d[3:0], d[12:8], d[21:17], d[30:26], d35 pck1b ck: sdrams d[25:22], d[34:31] pck1a ck: sdrams d[21:1 8], d[30:26], d35 pck 1b ck : sdrams d[25:22], d[34:31] pck 1a ck: sdrams d[21:18], d[30:26], d35 l l * s[3:2], ck1 and ck1 are nc ck1 ck1 120 ? 5%
rev. 1.3 / dec. 2010 23 16gb, 2gx72 module(4ra nk of x4) - page1 zq arrasa arcasa ars0a arwea apck0a apck0a arcke0a arodt0a ara[n:o]a vtt /arba[n:o]a cb[3:0] dqs8 dqs8 dqs dqs dm d9 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d8 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss d7 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d6 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d5 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d4 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d3 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d2 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d1 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d0 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] brrasa brcasa brs2a brwea bpck0a bpck0a brcke0a brodt1a bra[n:o]a /brba[n:o]a dqs dqs dm d45 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d44 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d47 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d46 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d49 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d48 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d51 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d50 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d53 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d52 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss vss vss vss ars1a arcke1a vdd brs3a brcke1a vdd dq[27:24] dqs3 dqs3 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss dq[19:16] dqs2 dqs2 dqs dqs dm dq [3:0] dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss dq[11:8] dqs1 dqs1 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss zq dq[3:0] dqs0 dqs0 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss
rev. 1.3 / dec. 2010 24 16gb, 2gx72 module(4ra nk of x4) - page2 zq arrasa arcasa ars0a arwea apck0a apck0a arcke0a arodt0a ara[n:o]a vtt /arba[n:o]a cb[7:4] dqs17 dqs17 dqs dqs dm d27 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d26 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss d25 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d24 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d23 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d22 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d21 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d20 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d19 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d18 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] brrasa brcasa brs2a brwea bpck0a bpck0a brcke0a brodt1a bra[n:o]a /brba[n:o]a dqs dqs dm d63 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d62 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d65 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d64 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d67 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d66 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d69 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d68 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d71 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d70 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss vss vss vss ars1a arcke1a vdd brs3a brcke1a vdd dq[31:28] dqs12 dqs12 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss dq[23:20] dqs11 dqs11 dqs dqs dm dq [3:0] dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss dq[11:8] dqs10 dqs10 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss zq dq[7:4] dqs9 dqs9 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss
rev. 1.3 / dec. 2010 25 16gb, 2gx72 module(4ra nk of x4) - page3 zq arrasb arcasb ars0b arweb apck0b apck0b arcke0b arodt0b ara[n:o]b vtt /arba[n:o]b dq[35:32] dqs4 dqs4 dqs dqs dm d11 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d10 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss d13 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d12 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d15 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d14 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d17 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d16 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] brrasb brcasb brs2b brweb bpck0b bpck0b brcke0b brodt1b bra[n:o]b /brba[n:o]b dqs dqs dm d13 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d42 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d41 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d40 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d39 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d38 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d37 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d36 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss vss vss vss ars1b arcke1b vdd brs3b brcke1b vdd dq[43:40] dqs5 dqs5 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss dq[51:48] dqs6 dqs6 dqs dqs dm dq [3:0] dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss dq[59:56 dqs7 dqs7 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss zq
rev. 1.3 / dec. 2010 26 16gb, 2gx72 module(4ra nk of x4) - page4 zq arrasb arcasb ars0b arweb apck0b apck0b arcke0b arodt0b ara[n:o]b vtt /arba[n:o]b dq[39:36] dqs13 dqs13 dqs dqs dm d29 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d28 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss d31 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d30 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d33 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d32 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d35 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d34 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] brrasb brcasb brs2b brweb bpck0b bpck0b brcke0b brodt1b bra[n:o]b /brba[n:o]b dqs dqs dm d61 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] dqs dqs dm d60 dq [3:0] zq ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d59 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d58 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d57 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d56 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d55 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] d54 ras cas cs we ck ck cke odt a[n:o]/ba[n:o] vss vss vss vss ars1b arcke1b vdd brs3b brcke1b vdd dq[47:44] dqs14 dqs14 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss dq[55:52] dqs15 dqs15 dqs dqs dm dq [3:0] dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss dq[63:60] dqs16 dqs16 dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss dqs dqs dm dq [3:0] zq dqs dqs dm dq [3:0] zq vss vss vss vss zq d0?d71 v dd v tt v ddspd d0?d71 vrefdq spd vrefca v ss d0?d71 d0?d71 note: 1. dq-to-i/o wiring may be changed within a nibble. 2. unless otherwise noted, resistor values are 15 ohms 5%. 3. see the wiring diagrams for all resistors associated with the command, address and control bus. 4. zq resistors are 240 ohms 1%. for all other resistor values refer to the appropriate wiring diagram. vddspd event scl sda sa0 spd with integrated ts sa1 sa2 vss vddspd event scl sda sa0 sa1 sa2 vss plan to use spd with integrated ts of class b and might be changed on customer?s requests. for more details of spd and thermal sensor, please contact local hynix sales representative
rev. 1.3 / dec. 2010 27 16gb, 2gx72 module(4ra nk of x4) - page5 ck1 ck1 120 ? 5% s2 s3 ba[n:0] a[n:0] ras cas we cke0 ck0 ck0 par_in brs2a cs 1: sdrams d45,d47,d49,d51,d53 brs2b cs 1: sdrams d37,d39,d41,d43, brs3a cs0 : sdrams d44.d46,d48,d50,d52, brrasb ras : sdrams d[43:36],d[61:54] brs3b cs0 : sdrams d36,d38,d40,d42, brba[n:0]b ba[n:0]: sdrams d[43:36],d[61:54] brba[n:0]a ba[n:0]: sdrams d[53:44],d[71:62] brrasa ras : sdrams d[53:44],d[71:62] brcasb cas : sdrams d[43:36],d[61:54] brcasa cas : sdrams d[53:44],d[71:62] brweb we : sdrams d[43:36],d[61:54] brwea we : sdrams d[53:44],d[71:62] brcke0b cke1: sdrams d37,d39,d41,d43, brcke0a cke1: sdrams d45,d47,d49,d51,d53, brodt1b odt0: sdrams d37,d39,d41,d43 brodt1a odt1: sdrams d45,d47,d49,d51,d53 bpck0b ck: sdrams d[43:36] bpck0a ck: sdrams d[53:44] bpck 0b ck : sdrams d[43:36] bpck 0a ck : sdrams d[53:44] err_out reset rst 1:2 r e g i s t e r / p brcke1b cke0: sdrams d36,d38,d40,d42, brcke1a cke0: sdrams d44.d46,d48,d50,d52, odt1 cke1 bra[n:0]b a[n:0]: sdrams d[43:36],d[61:54] bra[n:0]a a[n:0]: sdrams d[55:44],d[71:62] bpck1b ck: sdrams d[61:54] bpck1a ck: sdrams d[71:62] bpck 1b ck : sdrams d[61:54] bpck 1a ck: sdrams d[71:62] l l b d63,d65,d67,d69,d71 d55,d57,d59,d61 d62,d64,d66,d68,d70 d54,d56,d58,d60 d63,d65,d67,d69,d71 d55,d57,d59,d61 d62,d64,d66,d68,d70 d54,d56,d58,d60 d63,d65,d67,d69,d71 d55,d57,d59,d61 120 ? 5% s0 s1 ba[n:0] a[n:0] ras cas we cke0 ck0 ck0 par_in ars0a cs 1: sdrams d1,d3,d5,d7 d9, ars0b cs 1: sdrams d11, d13, d15, d17, ars1a cs0 : sdrams d0, d2 , d4, d6, d8, arrasb ras : sdrams d[17:10],d[35:28] ars1b cs0 : sdrams d10, d12, d14, d16, arba[n:0]b ba[n:0]: sdrams d[17:10],d[35:28] arba[n:0]a ba[n:0]: sdrams d[9:0],d[27:18] arrasa ras : sdrams d[9:0],d[27:18] arcasb cas : sdrams d[17:10],d[35:28] arcasa cas : sdrams d[9:0],d[27:18] arweb we : sdrams d[17:10],d[35:28] arwea we : sdrams d[9:0],d[27:18] arcke0b cke1: sdrams d11,d13,d15,d17, arcke0a cke1: sdrams d1,d3,d5,d7,d9, arodt0b odt0: sdrams d11,d13,d15,d17, arodt0a odt1: sdrams d1,d3,d5,d7,d9, apck0b ck: sdrams d[17:10] apck0a ck: sdrams d[9:0] apck 0b ck : sdrams d[17:10] apck 0a ck : sdrams d[9:0] err_out reset rst rst : sdrams d[35:0] 1:2 r e g i s t e r / p arcke1b cke0: sdrams d10,d12,d14,d16, arcke1a cke0: sdrams d0,d2,d4,d6,d8, odt0 cke1 ara[n:0]b a[n:0]: sdrams d[17:10],d[35:28] ara[n:0]a a[n:0]: sdrams d[9:0],d[27:18] apck1b ck: sdrams d[35:28] apck1a ck: sdrams d[27:18] apck 1b ck : sdrams d[35:28] apck 1a ck: sdrams d[27:18] l l a d19, d21, d23, d25, d27 d29, d31, d33, d35 d18, d20, d22, d24, d26 d28, d30, d32, d34 d19, d21, d23, d25, d27 d29, d31, d33, d35 d18, d20, d22, d24, d26 d28, d30, d32, d34 d19, d21, d23, d25, d27 d29, d31, d33, d35 120 ? 5% 1. ck0 and ck0 are differentially terminated with a single 120 ohms 5% resistor. 2. ck1 and ck1 are differentially terminated with a single 120 ohms 5% resistor, but is not used. 3. unused register inputs odt1 for register a and odt0 for register b are tied to ground. 4. the module drawing on this page is not drawn to scale.
rev. 1.3 / dec. 2010 28 absolute maximum ratings absolute maximum dc ratings notes: 1. stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operat ion of the device at these or any other conditions above those indicated in the operational sections of this specif ication is not implied. exposure to absolute maximum rat - ing conditions for extended pe riods may affect reliability. 2. storage temperature is the case surface temperature on the center/top side of the dram. for the measurement conditions, please refer to jesd51-2 standard. 3. vdd and vddq must be within 300mv of each other at all times; and vref must not be greater than 0.6xvddq,when vdd and vddq are less than 500mv; vref may be equal to or less than 300mv. ? dram component operat ing temperature range notes: 1. operating temperature toper is the case surface temperature on the center / top side of the dram. for mea - surement conditions, please refer to the jedec document jesd51-2. 2. the normal temperature range specifies the temperatures where all dram specificatio ns will be supported. dur - ing operation, the dram case temperature must be maintained between 0 - 85 o c under all operating conditions. 3. some applications require operation of the dr am in the extended temperature range between 85 o c and 95 o c case temperature. full specifications are guaranteed in this range, but the following additional conditions apply: a. refresh commands must be doubled in frequency, theref ore reducing the refresh interval trefi to 3.9 s. it is also possible to specify a component with 1x refres h (trefi to 7.8s) in the extended temperature range. please refer to the dimm spd for option availability b. if self-refresh operation is required in the extended temperature range, then it is mandatory to either use the manual self-refresh mode with extended temperature range capability (mr2 a6 = 0b and mr2 a7 = 1b) or enable the optional auto self-refresh mode (mr2 a6 = 1b and mr2 a7 = 0b). hynix ddr3 sdrams sup - port auto self-refresh and in extended temperature range and please refer to hynix component datasheet and/or the dimm spd for trefi requirements in the extended temperature range absolute maximum dc ratings symbol parameter rating units notes vdd voltage on vdd pin relative to vss - 0.4 v ~ 1.975 v v 1, vddq voltage on vddq pin relative to vss - 0.4 v ~ 1.975 v v 1, v in , v out voltage on any pin relative to vss - 0.4 v ~ 1.975 v v 1 t stg storage temperature -55 to +100 o c1, 2 temperature range symbol parameter rating units notes t oper normal operating temperature range 0 to 85 o c 1,2 extended temperature range 85 to 95 o c1,3
rev. 1.3 / dec. 2010 29 ac & dc operating conditions recommended dc operating conditions notes: 1. under all conditions, vddq must be less than or equal to vdd. 2. vddq tracks with vdd. ac parameters ar e measured with vdd and vddq tied together. ac & dc input measurement levels ac and dc logic input levels for single-ended signals ac and dc input levels for single -ended command and address signals notes: 1. for input only pins except reset , vref = vrefca (dc). 2. refer to ?$paratext>? on page 42. 3. the ac peak noise on v ref may not allow v ref to deviate from v refca(dc) by more than +/-1% vdd (for reference: approx. +/- 15 mv). 4. for reference: approx. vdd/2 +/- 15 mv. recommended dc operating conditions symbol parameter rating units notes min. typ. max. vdd supply voltage 1.425 1.500 1.575 v 1,2 vddq supply voltage for output 1.425 1.500 1.575 v 1,2 single ended ac and dc input levels for command and address symbol parameter ddr3-800/1066/1333/1600 unit notes min max vih.ca(dc100) dc input logic high vref + 0.100 vdd v 1 vil.ca(dc100) dc input logic low vss vref - 0.100 v 1 vih.ca(ac175) ac input logic high vref + 0.175 note2 v 1, 2 vil.ca(ac175) ac input logic low note2 vref - 0.175 v 1, 2 vih.ca(ac150) ac input logic high vref + 0.150 note2 v 1, 2 vil.ca(ac150) ac input logic low note2 vref - 0.150 v 1, 2 v refca(dc ) reference voltage for add, cmd inputs 0.49 * vdd 0.51 * vdd v 3, 4
rev. 1.3 / dec. 2010 30 ac and dc input levels for single-ended signals ddr3 sdram will support two vih/v il ac levels for ddr3-800 and ddr3-1066 as specified in the table below. ddr3 sdram will also support corresponding tds values (table 41 and table 47 in ? ddr3 device operation?) as well as derating tables in table 44 of ?ddr3 device operation? de pending on vih/vil ac lev- els. notes: 1. vref = vrefdq (dc). 2. refer to ?$paratext>? on page 42. 3. the ac peak noise on v ref may not allow v ref to deviate from v refdq(dc) by more than +/-1% vdd (for reference: approx. +/- 15 mv). 4. for reference: approx. vdd/2 +/- 15 mv. single ended ac and dc input levels for dq and dm symbol parameter ddr3-800/1066 ddr3-1333/1600 unit notes min max min max vih.ca(dc100) dc input logic high vref + 0.100 vdd vref + 0.100 vdd v 1 vil.ca(dc100) dc input logic low vss vref - 0.100 vss vref - 0.100 v 1 vih.ca(ac175) ac input logic high vref + 0.175 note2 - - v 1, 2 vil.ca(ac175) ac input logic lo w note2 vref - 0.175 - - v 1, 2 vih.ca(ac150) ac input logic high vref + 0.150 note2 vref + 0.150 note2 v 1, 2 vil.ca(ac150) ac input logic low note2 vr ef - 0.150 note2 vref - 0.150 v 1, 2 v refdq(dc ) reference voltage for dq, dm inputs 0.49 * vdd 0.51 * vdd 0.49 * vdd 0.51 * vdd v 3, 4
rev. 1.3 / dec. 2010 31 vref tolerances the dc-tolerance limits and ac-noise limits for the reference voltages vrefca and v refdq are illustrated in figure below. it shows a valid reference voltage v ref (t) as a function of time. (v ref stands for v refca and v refdq likewise). v ref (dc) is the linear average of v ref (t) over a very long period of time (e.g. 1 sec). this average has to meet the min/max requirements in the table ?$paratext>? on page 37. furthermore v ref (t) may tempo- rarily deviate from v ref (dc) by no more than +/- 1% vdd. illustration of v ref(dc) tolerance and v ref ac-noise limits the voltage levels for setup and hold time measurements v ih(ac) , v ih(dc) , v il(ac) , and v il(dc) are depen- dent on v ref . ?v ref ? shall be understood as v ref(dc) , as defined in figure above. this clarifies that dc-variations of v ref affect the absolute voltage a sign al has to reach to achieve a valid high or low level and therefore the time to which se tup and hold is measured. system timing and voltage budgets need to account for v ref(dc) deviations from the optimum position within the data-eye of the input signals. this also clarifies that the dram setup/hold specific ation and derating values need to include time and voltage associated with v ref ac-noise. timing and voltage effects due to ac-noise on v ref up to the speci- fied limit (+/- 1% of vdd) are included in dram timings and their associated deratings. vdd vss vdd/2 v ref(dc) v ref ac-noise voltage time v ref(dc)max v ref(dc)min v ref (t)
rev. 1.3 / dec. 2010 32 ac and dc logic input levels for differential signals differential signal definition definition of differential ac-swi ng and ?time above ac-level? t dvac time differential input voltage(i.e.dqs - dqs#, ck - ck#) v il.diff.ac.max v il.diff.max 0 v il.diff.min v il.diff.ac.min t dvac half cycle t dvac
rev. 1.3 / dec. 2010 33 differential swing requirem ents for clock (ck - ck ) and strobe (dqs-dqs ) notes: 1. used to define a differential signal slew-rate. 2. for ck - ck use vih/vil (ac) of aadd/cmd and vrefca; for dqs - dqs , dqsl, dqsl , dqsu, dqsu use vih/vil (ac) of dqs and vrefdq; if a reduced ac-high or ac-low le vels is used for a signal group, then the reduced level applies also here. 3. these values are not defined; however, the single-ended signals ck, ck , dqs, dqs , dqsl, dqsl , dqsu, dqsu need to be within the respective limits (vih (dc) max, vil (dc) min) for sing le-ended signals as well as the limita - tions for overshoot and undershoot. refer to ?$paratext>? on page 42. differential ac and dc input levels symbol parameter ddr3-800, 1066, 1333, 1600 unit notes min max vihdiff differential input high + 0.200 note 3 v 1 vildiff differential input logic low note 3 - 0.200 v 1 vihdiff (ac) differential input high ac 2 x (vih (ac) - vref) note 3 v 2 vildiff (ac) differential input low ac note 3 2 x (vil (ac) - vref) v 2 allowed time before ringback (tdvac) for ck - ck and dqs - dqs slew rate [v/ns] tdvac [ps] @ |vih/ldiff (ac)| = 350mv tdvac [ps] @ |vih/ldiff (ac)| = 300mv min max min max > 4.0 75 - 175 - 4.0 57 - 170 - 3.0 50 - 167 - 2.0 38 - 163 1.8 34 - 162 - 1.6 29 - 161 - 1.4 22 - 159 - 1.2 13 - 155 - 1.0 0 - 150 - < 1.0 0 - 150 -
rev. 1.3 / dec. 2010 34 single-ended requirements for differential signals each individual component of a differen tial signal (ck, dqs, dqsl, dqsu, ck , dqs , dqsl , of dqsu ) has also to comply with certain requ irements for single-ended signals. ck and ck have to approximately reach vsehmin / vselmax (approximately equal to the ac-levels (vih (ac) / vil (ac)) for add/cmd signals) in every half-cycle. dqs, dqsl, dqsu, dqs , dqsl have to reach vsehmin / vselmax (a pproximately the ac-levels (vih (ac) / vil (ac)) for dq signals) in every half-cyc le preceding and following a valid transition. note that the applicable ac-levels for add/cmd and dq ?s might be different per speed-bin etc. e.g., if vih.ca(ac150)/vil.ca(ac150) is used for add/cmd signal s, then these ac-levels apply also for the single- ended signals ck and ck . single-ended requirements for differential signals. note that, while add/cmd and dq signal requirements are with respect to vref, the single-ended compo- nents of differential signals have a requirement with respect to vdd / 2; this is nominally the same. the transition of single-ended signals through the ac-lev els is used to measure se tup time. for single-ended components of differential signals the requirement to reach vselmax, vsehmin ha s no bearing on timing, but adds a restriction on the common mode characteristics of these signals. vdd or vddq vsehmin vdd/2 or vddq/2 vseh vselmax vss or vssq ck or dqs vsel time
rev. 1.3 / dec. 2010 35 notes: 1. for ck, ck use vih/vil (ac) of add/cmd; for strobes (dqs, dqs , dqsl, dqsl , dqsu, dqsu ) use vih/vil (ac) of dqs. 2. vih (ac)/vil (ac) for dqs is based on vrefdq; vih (ac) /vil (ac) for add/cmd is based on vrefca; if a reduced ac-high or ac-low level is used for a signal gr oup, then the reduced level applies also here. 3. these values are not defined; however, the single-ended signals ck, ck , dqs, dqs , dqsl, dqsl , dqsu, dqsu need to be within the respective limits (vih (dc) max, vil (dc) min) for sing le-ended signals as well as the limita - tions for overshoot and undershoot. refer to ?$paratext>? on page 42. single-ended levels for ck, dqs, dqsl, dqsu, ck , dqs , dqsl or dqsu symbol parameter ddr3-800, 1066, 1333, 1600 unit notes min max vseh single-ended high level for strobes (vdd / 2) + 0.175 note 3 v 1,2 single-ended high level for ck, ck (vdd /2) + 0.175 note 3 v 1,2 vsel single-ended low level for strobes note 3 (vdd / 2) = 0.175 v 1,2 single-ended low level for ck, ck note 3 (vdd / 2) = 0.175 v 1,2
rev. 1.3 / dec. 2010 36 differential input cross point voltage to guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input signals (ck, ck and dqs, dqs ) must meet the requirements in table below. the differential input cross point voltage vix is measured from the actual cross point of true and complement signal s to the midlevel between of vdd and vss vix definition notes: 1. extended range for v ix is only allowed for clock and if sing le-ended clock input signals ck and ck are monotonic with a single-ended swing vsel / vseh of at least vdd/2 +/-250 mv, and when the differential slew rate of ck - ck is larger than 3 v/ns. ? 2. refer to the table ?$paratext>? on page 35 for vsel and vseh standard values. cross point voltage for differential input signals (ck, dqs) symbol parameter ddr3-800, 1066, 1333, 1600 unit notes min max v ix differential input cross point voltage relative to vdd/2 for ck, ck -150 150 mv -175 175 mv 1 v ix differential input cross point voltage relative to vdd/2 for dqs, dqs -150 150 mv vdd vss vdd/2 v ix v ix v ix ck , dqs ck, dqs
rev. 1.3 / dec. 2010 37 slew rate definitions for single-ended input signals see 7.5 ?address / command setup, hold and derating ? on page 137 in ?ddr3 device operation? for sin- gle-ended slew rate definitions for address and command signals. ? see 7.6 ?data setup, hold and slew rate derating? on page 144 in ?ddr3 device operation? for single- ended slew rate definition for data signals. slew rate definitions for differential input signals input slew rate for differential signals (ck, ck and dqs, dqs ) are defined and measur ed as shown in table and figure below. notes: the differential signal (i.e. ck-ck and dqs-dqs ) must be linear between these thresholds. differential input slew rate definition for dqs, dqs and ck, ck differential input slew rate definition description measured defined by min max differential input slew rate for rising edge (ck-ck and dqs-dqs ) vildiffmax vihdiffmin [vihdiffmi n-vildiffmax] / deltatrdiff differential input slew rate for falling edge (ck-ck and dqs-dqs ) vihdiffmin vildiffmax [vihdiffmi n-vildiffmax] / deltatfdiff delta tfdiff delta trdiff vihdiffmin vildiffmax 0 differential input voltag e (i.e. dqs-dqs; ck-ck) differential input slew rate definition for dqs, dqs# and ck, ck#
rev. 1.3 / dec. 2010 38 ac & dc output measurement levels single ended ac and dc output levels table below shows the output levels used for measurements of single ended signals. notes: 1. the swing of 0. 1 x v ddq is based on approximately 50% of the st atic single ended output high or low swing with a driver impedance of 40 ? and an effective test load of 25 ? to v tt = v ddq / 2. differential ac and dc output levels table below shows the output levels used for measurements of single ended signals. notes: 1. the swing of 0.2 x v ddq is based on approximately 50% of the st atic differential output high or low swing with a driver impedance of 40 ? and an effective test load of 25 ? to v tt = v ddq /2 at each of the differential outputs. single-ended ac and dc output levels symbol parameter ddr3-800, 1066, 1333 and 1600 unit notes v oh(dc) dc output high measurement level (for iv curve linearity) 0.8 x v ddq v v om(dc) dc output mid measurement level (for iv curve linearity) 0.5 x v ddq v v ol(dc) dc output low measurement le vel (for iv curve linearity) 0.2 x v ddq v v oh(ac) ac output high measurement level (for output sr) v tt + 0.1 x v ddq v1 v ol(ac) ac output low measurement level (for output sr) v tt - 0.1 x v ddq v1 differential ac and dc output levels symbol parameter ddr3-800, 1066, 1333 and 1600 unit notes v ohdiff (ac) ac differential output high measurement level (for output sr) + 0.2 x v ddq v1 v oldiff (ac) ac differential output low measurement level (for output sr) - 0.2 x v ddq v1
rev. 1.3 / dec. 2010 39 single ended ou tput slew rate when the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between v ol(ac) and v oh(ac) for single ended signals are sh own in table and figure below. notes: 1. output slew rate is verified by design and charac terisation, and may not be su bject to production test. single ended output slew rate definition description: sr; slew rate q: query output (like in dq, which stands for data-in, query-output) se: single-ended signals for ron = rzq/7 setting single-ended output slew rate definition description measured defined by from to single-ended output slew rate for rising edge v ol(ac) v oh(ac) [v oh(ac) -v ol(ac) ] / deltatrse single-ended output slew rate for falling edge v oh(ac) v ol(ac) [v oh(ac) -v ol(ac) ] / deltatfse output slew rate (single-ended) ddr3-800 ddr3-1066 ddr3-1333 ddr3-1600 units parameter symbol min max min max min max min max single-ended output slew rate srqse 2.5 5 2.5 5 2.5 5 tbd 5 v/ns delta tfse delta trse voh(ac) vol(ac) v single ended output voltage(l.e.dq) single ended output slew rate definition
rev. 1.3 / dec. 2010 40 differential output slew rate with the reference load for timing measurements, output slew rate for falling an d rising edges is defined and measured between voldiff (ac) and vohdiff (ac) fo r differential signals as shown in table and figure below. differential output slew rate definition differential output slew rate definition description measured defined by from to differential output slew rate for rising edge v oldiff (ac) v ohdiff (ac) [v ohdiff (ac) -v oldiff (ac) ] / deltatrdiff differential output slew rate for falling edge v ohdiff (ac) v oldiff (ac) [v ohdiff (ac) -v oldiff (ac) ] / deltatfdiff notes: 1. output slew rate is verified by design and charac terization, and may not be subject to production test. differential output slew rate ddr3-800 ddr3-1066 ddr3-1333 ddr3-1600 units parameter symbol min max min max min max min max differential output slew rate srqdiff 5 10 5 10 5 10 tbd 10 v/ns description: sr; slew rate q: query output (like in dq, which stands for data-in, query-output) se: single-ended signals for ron = rzq/7 setting delta tfdiff delta trdiff vohdiff(ac) voldiff(ac) o differential output voltage(i.e. dqs-dqs) differential output slew rate definition
rev. 1.3 / dec. 2010 41 reference load for ac timing and output slew rate figure below represents the effective reference load of 25 ohms used in defining the relevant ac timing parameters of the device as well as output slew rate measurements. it is not intended as a precise representation of an y particular system environment or a depiction of the actual load presented by a production tester. system de signers should use ibis or other simulation tools to correlate the timing reference load to a system environment. manufacturers correlate to their production test conditions, generally one or more coaxial transm ission lines terminated at the tester electronics. reference load for ac timing and output slew rate dut dq dqs dqs vddq 25 ohm vtt = vddq/2 ck, ck
rev. 1.3 / dec. 2010 42 overshoot and unders hoot specifications address and control overshoot and undershoot specifications address and control overshoo t and undershoot definition ac overshoot/undershoot specification for address and control pins parameter ddr3- 800 ddr3- 1066 ddr3- 1333 ddr3- 1600 units maximum peak amplitude allowed for overshoot area. (see figure below) 0.4 0.4 0.4 0.4 v maximum peak amplitude allowed for undershoo t area. (see figure below) 0.4 0.4 0.4 0.4 v maximum overshoot area above vdd (see figure below) 0.67 0.5 0.4 0.33 v-ns maximum undershoot area below vss (see figure below) 0.67 0.5 0.4 0.33 v-ns (a0-a15, ba0-ba3, cs , ras , cas , we , cke, odt) see figure below for ea ch parameter definition maximum amplitude overshoot area vdd vss maxim um am plitude undershoot area time (ns) address and control overshoot and undershoot definition volts (v)
rev. 1.3 / dec. 2010 43 clock, data, strobe and mask over shoot and undershoot specifications clock, data, strobe and mask ov ershoot and undershoot definition ac overshoot/undershoot specificatio n for clock, data, strobe and mask parameter ddr3- 800 ddr3- 1066 ddr3- 1333 ddr3- 1600 units maximum peak amplitude allowed for overshoot area (see figure below) 0.4 0.4 0.4 0.4 v maximum peak amplitude allowed for undershoo t area (see figure below) 0.4 0.4 0.4 0.4 v maximum overshoot area above vdd (see figure below) 0.25 0.19 0.15 0.13 v-ns maximum undershoot area below vss (see figure below) 0.25 0.19 0.15 0.13 v-ns (ck, ck , dq, dqs, dqs , dm) see figure below for each parameter definition maximum amplitude overshoot area vddq vssq m axim um am plitude undershoot area time (ns) clock, data strobe and mask overshoot and undershoot definition volts (v)
rev. 1.3 / dec. 2010 44 refresh parameters by device density standard speed bins ddr3 sdram standard speed bins include tck, trcd , trp, tras and trc for each corresponding bin. ddr3-800 speed bins refresh parameters by device density parameter rtt_nom setting 512mb 1gb 2gb 4gb 8gb units notes ref command act or ref command time trfc 90 110 160 300 350 ns average periodic refresh interval trefi 0 ? c ? t case ? 85 ? c 7.8 7.8 7.8 7.8 7.8 us 85 ? c ? t case ? 95 ? c 3.9 3.9 3.9 3.9 3.9 us 1 for specific notes see "speed bin table notes" on page 48. speed bin ddr3-800e unit notes cl - nrcd - nrp 6-6-6 parameter symbol min max internal read command to first data t aa 15 20 ns act to internal read or write delay time t rcd 15 ? ns pre command period t rp 15 ? ns act to act or ref command period t rc 52.5 ? ns act to pre command period t ras 37.5 9 * trefi ns cl = 5 cwl = 5 t ck(avg) reserved ns 1, 2, 3, 4 cl = 6 cwl = 5 t ck(avg) 2.5 3.3 ns 1, 2, 3 supported cl settings 6 n ck supported cwl settings 5 n ck
rev. 1.3 / dec. 2010 45 ddr3-1066 speed bins for specific notes see "speed bin table notes" on page 48. speed bin ddr3-1066f unit note cl - nrcd - nrp 7-7-7 parameter symbol min max internal read command to first data t aa 13.125 20 ns act to internal read or write delay time t rcd 13.125 ? ns pre command period t rp 13.125 ? ns act to act or ref command period t rc 50.625 ? ns act to pre command period t ras 37.5 9 * trefi ns cl = 5 cwl = 5 t ck(avg) reserved ns 1, 2, 3, 4, 5 cwl = 6 t ck(avg) reserved ns 4 cl = 6 cwl = 5 t ck(avg) 2.5 3.3 ns 1, 2, 3, 5 cwl = 6 t ck(avg) reserved ns 1, 2, 3, 4 cl = 7 cwl = 5 t ck(avg) reserved ns 4 cwl = 6 t ck(avg) 1.875 < 2.5 ns 1, 2, 3, 4 cl = 8 cwl = 5 t ck(avg) reserved ns 4 cwl = 6 t ck(avg) 1.875 < 2.5 ns 1, 2, 3 supported cl settings 6, 7, 8 n ck supported cwl settings 5, 6 n ck
rev. 1.3 / dec. 2010 46 ddr3-1333 speed bins for specific notes see "speed bin table notes" on page 48. speed bin ddr3-1333h unit note cl - nrcd - nrp 9-9-9 parameter symbol min max internal read command to first data t aa 13.5 (13.125) 8 20 ns act to internal read or write delay time t rcd 13.5 (13.125) 8 ?ns pre command period t rp 13.5 (13.125) 8 ?ns act to act or ref command period t rc 49.5 (49.125) 8 ?ns act to pre command period t ras 36 9 * trefi ns cl = 5 cwl = 5 t ck(avg) reserved ns 1,2, 3,4, 6 cwl = 6, 7 t ck(avg) reserved ns 4 cl = 6 cwl = 5 t ck(avg) 2.5 3.3 ns 1, 2, 3, 6 cwl = 6 t ck(avg) reserved ns 1, 2, 3, 4, 6 cwl = 7 t ck(avg) reserved ns 4 cl = 7 cwl = 5 t ck(avg) reserved ns 4 cwl = 6 t ck(avg) 1.875 < 2.5 ns 1, 2, 3, 4, 6 reserved cwl = 7 t ck(avg) reserved ns 1, 2, 3, 4 cl = 8 cwl = 5 t ck(avg) reserved ns 4 cwl = 6 t ck(avg) 1.875 < 2.5 ns 1, 2, 3, 6 cwl = 7 t ck(avg) reserved ns 1, 2, 3, 4 cl = 9 cwl = 5, 6 t ck(avg) reserved ns 4 cwl = 7 t ck(avg) 1.5 <1.875 ns 1, 2, 3, 4 cl = 10 cwl = 5, 6 t ck(avg) reserved ns 4 cwl = 7 t ck(avg) 1.5 <1.875 ns 1, 2, 3 reserved ns supported cl settings 6, 8, (7), 9, (10) n ck supported cwl settings 5, 6, 7 n ck
rev. 1.3 / dec. 2010 47 ddr3-1600 speed bins for specific notes see "speed bin table notes" on page 48. speed bin ddr3-1600k unit note cl - nrcd - nrp 11-11-11 parameter symbol min max internal read command to first data t aa 13.75 (13.125) 8 20 ns act to internal read or write delay time t rcd 13.75 (13.125) 8 ?ns pre command period t rp 13.75 (13.125) 8 ?ns act to act or ref command period t rc 48.75 (48.125) 8 ?ns act to pre command period t ras 35 9 * trefi ns cl = 5 cwl = 5 t ck(avg) reserved ns 1, 2, 3, 4, 7 cwl = 6, 7 t ck(avg) reserved ns 4 cl = 6 cwl = 5 t ck(avg) 2.5 3.3 ns 1, 2, 3, 7 cwl = 6 t ck(avg) reserved ns 1, 2, 3, 4, 7 cwl = 7 t ck(avg) reserved ns 4 cl = 7 cwl = 5 t ck(avg) reserved ns 4 cwl = 6 t ck(avg) 1.875 < 2.5 ns 1, 2, 3, 4, 7 cwl = 7 t ck(avg) reserved ns 1, 2, 3, 4, 7 cwl = 8 t ck(avg) reserved ns 4 cl = 8 cwl = 5 t ck(avg) reserved ns 4 cwl = 6 t ck(avg) 1.875 < 2.5 ns 1, 2, 3, 7 cwl = 7 t ck(avg) reserved ns 1, 2, 3, 4, 7 cwl = 8 t ck(avg) reserved ns 1, 2, 3, 4 cl = 9 cwl = 5, 6 t ck(avg) reserved ns 4 cwl = 7 t ck(avg) 1.5 <1.875 ns 1, 2, 3, 4, 7 cwl = 8 t ck(avg) reserved ns 1, 2, 3, 4 cl = 10 cwl = 5, 6 t ck(avg) reserved ns 4 cwl = 7 t ck(avg) 1.5 <1.875 ns 1, 2, 3, 7 cwl = 8 t ck(avg) reserved ns 1,2,3,4 cl = 11 cwl = 5, 6,7 t ck(avg) reserved ns 4 cwl = 8 t ck(avg) 1.25 <1.5 ns 1, 2, 3 supported cl settings 6, (7), 8, (9), 10, 11 n ck supported cwl settings 5, 6, 7, 8 n ck
rev. 1.3 / dec. 2010 48 speed bin table notes absolute specification (t oper ; v ddq = v dd = 1.5v +/- 0.075 v); notes: 1. the cl setting and cwl setting result in tck(av g).min and tck(avg).max requirements. when making a selection of tck (avg), both need to be fulfilled: requirements from cl setting as well as requirements from cwl setting. 2. tck(avg).min limits: since cas latency is not purely analog - data and strobe output are synchronized by the dll - all possible intermediate frequencies ma y not be guaranteed. an application should use the next smaller jedec standard tck (avg) value (2.5, 1. 875, 1.5, or 1.25 ns) when calculating cl [nck] = taa [ns] / tck (avg) [ns], rounding up to the next ?supported cl?. 3. tck(avg).max limits: calculate tck (avg) = taa. max / clselected and round the resulting tck (avg) down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or 1.25 ns). this result is tck(avg).max corresponding to clse lected. 4. ?reserved? settings are not allowed. user must program a different value. 5. any ddr3-1066 speed bin also supports functional op eration at lower frequencies as shown in the table which are not subject to production tests but verified by design/characterization. 6. any ddr3-1333 speed bin also supports functional op eration at lower frequencies as shown in the table which are not subject to production tests but verified by design/characterization. 7. any ddr3-1600 speed bin also supports functional oper ation at lower frequencie s as shown in the table which are not subject to production tests but verified by design/characterization. 8. hynix ddr3 sdram devices support down binning to cl=7 and cl=9, and taa/trcd/trp satisfy mini- mum value of 13.125ns. spd settings are also prog rammed to match. for example, ddr3 1333h devices supporting down binning to ddr3-1066f should program 13.125 ns in spd bytes for taamin (byte 16), trcdmin (byte 18), and trpmin (byte 20). ddr3-1600k devices supporting down binning to ddr3-1333h or ddr3 1600f should program 13.125 ns in spd bytes for taamin (byte 16), trcdmin (byte 18), and trp- min (byte 20). once trp (byte 20) is programmed to 13.125ns, trcmin (byte 21,23) also should be pro- grammed accordingly. for example, 49.125ns (trasm in + trpmin = 36 ns + 13.125 ns) for ddr3-1333h and 48.125ns (trasmin + trpmin = 35 ns + 13.125 ns) for ddr3-1600k.
rev. 1.3 / dec. 2010 49 environmental parameters note : 1. stress greater than those listed may cause permanent damage to the device. this is a stress rating only, and device functional operation at or above the condit ions indicated is not implied. expousure to absolute maximum rating conditions for extended periods may affect reliablility. 2. up to 9850 ft. 3. the designer must meet the case temperature specifications for individual module components. symbol parameter rating units notes t opr operating temperature see note 3 h opr operating humidity (relative) 10 to 90 % 1 t stg storage temperature -50 to +100 o c 1 h stg storage humidity (without condensation) 5 to 95 % 1 p bar barometric pressure (operating & storage) 105 to 69 k pascal 1, 2
rev. 1.3 / dec. 2010 50 pin capacitance (vdd=1.5v, vddq=1.5v) 2gb: hmt325r7bfr8c 4gb: hmt351r7bfr8c 4gb: hmt351r7bfr4c 8gb: hmt31gr7bfr8c pin symbol min max unit ck0, ck 0 c ck tbd tbd pf cke, odt, cs c ctrl tbd tbd pf address, ras , cas , we c i tbd tbd pf dq, dm, dqs, dqs c io tbd tbd pf pin symbol min max unit ck0, ck 0 c ck tbd tbd pf cke, odt, cs c ctrl tbd tbd pf address, ras , cas , we c i tbd tbd pf dq, dm, dqs, dqs c io tbd tbd pf pin symbol min max unit ck0, ck 0 c ck tbd tbd pf cke, odt, cs c ctrl tbd tbd pf address, ras , cas , we c i tbd tbd pf dq, dm, dqs, dqs c io tbd tbd pf pin symbol min max unit ck0, ck 0 c ck tbd tbd pf cke, odt, cs c ctrl tbd tbd pf address, ras , cas , we c i tbd tbd pf dq, dm, dqs, dqs c io tbd tbd pf
rev. 1.3 / dec. 2010 51 8gb: hmt31gr7bfr4c 16gb: hmt42gr7bmr4c note : 1. pins not under test are tied to gnd. 2. these value are guaranteed by design and tested on a sample basis only. pin symbol min max unit ck0, ck 0 c ck tbd tbd pf cke, odt, cs c ctrl tbd tbd pf address, ras , cas , we c i tbd tbd pf dq, dm, dqs, dqs c io tbd tbd pf pin symbol min max unit ck0, ck 0 c ck tbd tbd pf cke, odt, cs c ctrl tbd tbd pf address, ras , cas , we c i tbd tbd pf dq, dm, dqs, dqs c io tbd tbd pf
rev. 1.3 / dec. 2010 52 idd and iddq specification pa rameters and test conditions idd and iddq measurement conditions in this chapter, idd and iddq measurement conditions such as test load and patt erns are defined. figure 1. shows the setup and test load for idd and iddq measurements. ? idd currents (such as idd0, idd1, idd2n, idd2nt , idd2p0, idd2p1, idd2q, idd3n, idd3p, idd4r, idd4w, idd5b, idd6, idd6et, idd6tc and idd7) are measured as time-averaged currents with all vdd balls of the ddr3 sdram under test tied togeth er. any iddq current is not included in idd cur - rents. ? iddq currents (such as iddq2nt and iddq4r) are measured as time-averaged currents with all vddq balls of the ddr3 sdram under test tied toge ther. any idd current is not included in iddq cur - rents. ? attention: iddq values cannot be directly used to calculate io power of the ddr3 sdram. they can be used to support correlation of simulated io power to actual io po wer as outlined in figure 2. in dram module application, iddq cannot be measured separately si nce vdd and vddq are using one merged-power layer in module pcb. for idd and iddq measurements, the following definitions apply: ? ?0? and ?low? is defined as vin <= v ilac(max). ? ?1? and ?high? is defined as vin >= v ihac(max). ? ?mid_level? is defined as inputs are vref = vdd/2. ? timing used for idd and iddq measurement-loop patterns are provided in table 1. ? basic idd and iddq measurement co nditions are described in table 2. ? detailed idd and iddq measurement-loop patte rns are described in table 3 through table 10. ? idd measurements are done after properly initializi ng the ddr3 sdram. this includes but is not lim - ited to setting ? ron = rzq/7 (34 ohm in mr1); ? qoff = 0 b (output buffer enabled in mr1); ? rtt_nom = rzq/6 (40 ohm in mr1); ? rtt_wr = rzq/2 (120 ohm in mr2); ? tdqs feature disabled in mr1 ? attention: the idd and iddq measurement-loop patterns need to be executed at least one time before actual idd or iddq measurement is started. ? define d = { cs , ras , cas , we }:= {high, low, low, low} define d = { cs , ras , cas , we }:= {high, high, high, high}
rev. 1.3 / dec. 2010 53 figure 1 - measurement setup and test load for idd and iddq (optional) measurements [note: dimm level output test load condition may be different from above figure 2 - correlation from simulated channel io power to actual ch annel io power supported by iddq measurement v dd ddr3 sdram v ddq reset ck/ck dqs, dqs cs ras , cas , we a, ba odt zq v ss v ssq dq, dm, tdqs, tdqs cke r tt = 25 ohm v ddq /2 i dd i ddq (optional) application specific memory channel environment channel io power simulation iddq simulation iddq simulation channel io power number iddq test load correction
rev. 1.3 / dec. 2010 54 table 1 -timings used for idd an d iddq measurement-loop patterns table 2 -basic idd and id dq measurement conditions symbol ddr3-1066 ddr3-1333 ddr3-1600 unit 7-7-7 9-9-9 11-11-11 t ck 1.875 1.5 1.25 ns cl 7 9 11 nck n rcd 7911nck n rc 27 33 39 nck n ras 20 24 28 nck n rp 7911nck n faw 1kb page size 20 20 24 nck 2kb page size 27 30 32 nck n rrd 1kb page size 4 4 5 nck 2kb page size 6 5 6 nck n rfc -512mb 48 60 72 nck n rfc -1 gb 59 74 88 nck n rfc - 2 gb 86 107 128 nck n rfc - 4 gb 160 200 240 nck n rfc - 8 gb 187 234 280 nck symbol description i dd0 operating one bank active-precharge current ? cke: high; external clock: on; tck, nrc, nras, cl: see table 1; bl: 8 a) ; al: 0; cs : high between act and pre; command, address, bank address inputs: partiall y toggling according to table 3; data io: mid-level; dm: stable at 0; bank activity: cyclin g with one bank active at a time: 0, 0,1,1,2,2,... (see table 3); output buf- fer and rtt: enabled in mode registers b) ; odt signal: stable at 0; pattern details: see table 3. i dd1 operating one bank active-precharge current cke: high; external clock: on; tck, n rc, nras, nrcd, cl: see table 1; bl: 8 a) ; al: 0; cs : high between act, rd and pre; command, address; bank address inputs, da ta io: partially toggling ac cording to table 4; dm: stable at 0; bank activity: cycling with on bank active at a time: 0,0,1,1,2,2,... (see table 4); output buffer and rtt: enabled in mode registers b) ; odt signal: stable at 0; pattern details: see table 4.
rev. 1.3 / dec. 2010 55 i dd2n precharge standby current cke: high; external clock: on ; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : stable at 1; command, address, bank address inputs: partially toggling accord ing to table 5; data io: mid_level; dm: stable at 0; bank activity: all banks closed; output buffer and rtt: enabled in mode registers b) ; odt signal: stable at 0; pattern details: see table 5. i dd2nt precharge standby odt current cke: high; external clock: on ; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : stable at 1; command, address, bank address inputs: partially toggling accord ing to table 6; data io: mid_level; dm: stable at 0; bank activity: all banks closed; output buffer and rtt: enabled in mode registers b) ; odt signal: toggling according to table 6; pattern details: see table 6. i dd2p0 precharge power-down current slow exit cke: low; external clock: on; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : stable at 1; command, address, bank address inputs: stable at 0; data io: mid_level; dm: st able at 0; bank activity: all banks closed; output buf- fer and rtt: enabled in mode registers b) ; odt signal: stable at 0; prec harge power down mode: slow exit c) i dd2p1 precharge power-down current fast exit cke: low; external clock: on; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : stable at 1; command, address, bank address inputs: stable at 0; data io: mid_level; dm: st able at 0; bank activity: all banks closed; output buf- fer and rtt: enabled in mode registers b) ; odt signal: stable at 0; prec harge power down mode: fast exit c) i dd2q precharge quiet standby current cke: high; external clock: on ; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : stable at 1; command, address, bank address inputs: stable at 0; data io: mid_level; dm: st able at 0; bank activity: all banks closed; output buf- fer and rtt: enabled in mode registers b) ; odt signal: stable at 0 i dd3n active standby current cke: high; external clock: on ; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : stable at 1; command, address, bank address inputs: partially toggling accord ing to table 5; data io: mid_level; dm: stable at 0; bank activity: all banks open; output buffer and rt t: enabled in mode registers b) ; odt signal: stable at 0; pattern details: see table 5. i dd3p active power-down current cke: low; external clock: on; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : stable at 1; command, address, bank address inputs: stable at 0; data io: mid_level; dm: stable at 0; bank activity: all banks open; output buffer and rtt: enabled in mode registers b) ; odt signal: stable at 0 symbol description
rev. 1.3 / dec. 2010 56 i dd4r operating burst read current cke: high; external clock: on ; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : high between rd; command, address, bank address inputs: partially toggling according to tabl e 7; data io: seamless read data burst with different data between one burst and the next one according to tabl e 7; dm: stable at 0; bank activity: all banks open, rd commands cycling through banks: 0,0,1,1,2,2,...(see table 7); output buffer and rtt: enabled in mode registers b) ; odt signal: stable at 0; pattern details: see table 7. i dd4w operating burst write current cke: high; external clock: on ; tck, cl: see table 1; bl: 8 a) ; al: 0; cs : high between wr; command, address, bank address inputs: partially toggling according to tabl e 8; data io: seamless read data burst with different data between one burst and the next one according to tabl e 8; dm: stable at 0; bank activity: all banks open, wr commands cycling through banks: 0,0,1,1,2,2,...(see table 8); output buffer and rtt: enabled in mode registers b) ; odt signal: stable at high; pattern details: see table 8. i dd5b burst refresh current cke: high; external clock: on; tck, cl, nrfc: see table 1; bl: 8 a) ; al: 0; cs : high between ref; command, address, bank address inputs: partiall y toggling according to table 9; data io: mid_level; dm: stable at 0; bank activity: ref command every nref (see table 9); output buffer and rtt: enabled in mode registers b) ; odt signal: stable at 0; pattern details: see table 9. i dd6 self-refresh current: normal temperature range t case : 0 - 85 o c; auto self-refresh (asr): disabled d) ;self-refresh temperature range (srt): normal e) ; cke: low; external clock: off; ck and ck : low; cl: see table 1; bl: 8 a) ; al: 0; cs , command, address, bank address inputs, data io: mid_level; dm: stable at 0; bank activity: self-refresh operation; output buffer and rtt: enabled in mode registers b) ; odt signal: mid_level i dd6et self-refresh current: extended temperature range (optional) t case : 0 - 95 o c; auto self-refresh (asr): disabled d) ;self-refresh temperature range (srt): extended e) ; cke: low; external clock: off; ck and ck : low; cl: see table 1; bl: 8 a) ; al: 0; cs , command, address, bank address inputs, data io: mid_level; dm: stable at 0; bank activity: extended temperature self-refresh operation; output buffer and rtt: enabled in mode registers b) ; odt signal: mid_level i dd6tc auto self-refresh current (optional) t case : 0 - 95 o c; auto self-refresh (asr): enabled d) ;self-refresh temperature range (srt): normal e) ; cke: low; external clock: off; ck and ck : low; cl: see table 1; bl: 8 a) ; al: 0; cs , command, address, bank address inputs, data io: mid_level; dm: stable at 0; ba nk activity: auto self-refresh operation; output buf- fer and rtt: enabled in mode registers b) ; odt signal: mid_level symbol description
rev. 1.3 / dec. 2010 57 a) burst length: bl8 fixed by mrs: set mr0 a[1,0]=00b b) output buffer enable: set mr1 a[12] = 0b; set mr1 a[5,1] = 01b; rtt_nom enable: set mr1 a[9,6,2] = 011b; rtt_wr enable: set mr2 a[10,9] = 10b c) precharge power down mode: set mr0 a12=0b for slow exit or mr0 a12 = 1b for fast exit d) auto self-refresh (asr): set mr2 a6 = 0b to disable or 1b to enable feature e) self-refresh temperature range (srt): set mr2 a7 = 0b for normal or 1b for extended temperature range f) read burst type: nibble sequential, set mr0 a[3] = 0b i dd7 operating bank interleave read current cke: high; external clock: on; tck, nrc, nr as, nrcd, nrrd, nfaw, cl: see table 1; bl: 8 a),f) ; al: cl-1; cs : high between act and rda; command, address, bank a ddress inputs: partially togg ling according to table 10; data io: read data burst with different data betw een one burst and the next one according to table 10; dm: stable at 0; bank activity: two times interleaved cycling through banks (0, 1,.. .7) with different address- ing, wee table 10; output buffer an d rtt: enabled in mode registers b) ; odt signal: stable at 0; pattern details: see table 10. symbol description
rev. 1.3 / dec. 2010 58 table 3 - idd0 measurement-loop pattern a) a) dm must be driven low all the time. dqs, dqs are mid-level. b) dq signals are mid-level. ck, ck cke sub-loop cycle number command cs ras cas we odt ba[2:0] a[15:11] a[10] a[9:7] a[6:3] a[2:0] data b) toggling static high 0 0 act 0 0 1 1 0 0 00 0 0 0 0 - 1,2 d, d 1 0 0 0 0 0 00 0 0 0 0 - 3,4 d , d 1111 0 0000 0 0 0 - ... repeat pattern 1...4 until nras - 1, truncate if necessary nras pre 0 0 1 0 0 0 00 0 0 0 0 - ... repeat pattern 1...4 until n rc - 1, truncate if necessary 1*nrc+0 act 0 0 1 1 0 0 00 0 0 f 0 - 1*nrc+1, 2 d, d 1 0 0 0 0 0 00 0 0 f 0 - 1*nrc+3, 4 d , d 1111 0 0000 0 f 0 - ... repeat pattern 1...4 until 1*nrc + nras - 1, truncate if necessary 1*nrc+nras pre 0 0 1 0 0 0 00 0 0 f 0 - ... repeat pattern 1...4 until 2*nrc - 1, truncate if necessary 1 2*nrc repeat sub-loop 0, use ba[2:0] = 1 instead 2 4*nrc repeat sub-loop 0, use ba[2:0] = 2 instead 3 6*nrc repeat sub-loop 0, use ba[2:0] = 3 instead 4 8*nrc repeat sub-loop 0, use ba[2:0] = 4 instead 5 10*nrc repeat sub-loop 0, use ba[2:0] = 5 instead 6 12*nrc repeat sub-loop 0, use ba[2:0] = 6 instead 7 14*nrc repeat sub-loop 0, use ba[2:0] = 7 instead
rev. 1.3 / dec. 2010 59 table 4 - idd1 measurement-loop pattern a) a) dm must be driven low all the time. dqs, dqs are used according to rd commands, otherwise mid- level. b) burst sequence driven on each dq signal by re ad command. outside burst operation, dq signals are mid_level. ck, ck cke sub-loop cycle number command cs ras cas we odt ba[2:0] a[15:11] a[10] a[9:7] a[6:3] a[2:0] data b) toggling static high 0 0 act001100000000 - 1,2 d, d 1 0 0 0 0 0 00 0 0 0 0 - 3,4 d , d 111100000000 - ... repeat pattern 1...4 until nrcd - 1, truncate if necessary nrcd rd 0 1 0 1 0 0 00 0 0 0 0 00000000 ... repeat pattern 1...4 until nras - 1, truncate if necessary nras pre001000000000 - ... repeat pattern 1...4 until nr c - 1, truncate if necessary 1*nrc+0 act 0 0 1 1 0 0 00 0 0 f 0 - 1*nrc+1,2 d, d 1 0 0 0 0 0 00 0 0 f 0 - 1*nrc+3,4 d , d 1111000000f0 - ... repeat pattern nrc + 1,. ..4 until nrc + nrce - 1, truncate if necessary 1*nrc+nrcd rd 0 1 0 1 0 0 00 0 0 f 0 00110011 ... repeat pattern nrc + 1, ...4 until nrc + nras - 1, truncate if necessary 1*nrc+nras pre 0 0 1 0 0 0 00 0 0 f 0 - ... repeat pattern nrc + 1, ...4 until *2 nrc - 1, truncate if necessary 1 2*nrc repeat sub-loop 0, use ba[2:0] = 1 instead 2 4*nrc repeat sub-loop 0, use ba[2:0] = 2 instead 3 6*nrc repeat sub-loop 0, use ba[2:0] = 3 instead 4 8*nrc repeat sub-loop 0, use ba[2:0] = 4 instead 5 10*nrc repeat sub-loop 0, use ba[2:0] = 5 instead 6 12*nrc repeat sub-loop 0, use ba[2:0] = 6 instead 7 14*nrc repeat sub-loop 0, use ba[2:0] = 7 instead
rev. 1.3 / dec. 2010 60 table 5 - idd2n and idd3n measurement-loop pattern a) a) dm must be driven low all the time. dqs, dqs are mid-level. b) dq signals are mid-level. table 6 - idd2nt and iddq2n t measurement-loop pattern a) a) dm must be driven low all the time. dqs, dqs are mid-level. b) dq signals are mid-level. ck, ck cke sub-loop cycle number command cs ras cas we odt ba[2:0] a[15:11] a[10] a[9:7] a[6:3] a[2:0] data b) toggling static high 0 0 d10000000000 - 1d10000000000- 2d 111 1 0 0 0 0 0 f 0 - 3d 111 1 0 0 0 0 0 f 0 - 1 4-7 repeat sub-loop 0, use ba[2:0] = 1 instead 2 8-11 repeat sub-loop 0, use ba[2:0] = 2 instead 3 12-15 repeat sub-loop 0, use ba[2:0] = 3 instead 4 16-19 repeat sub-loop 0, use ba[2:0] = 4 instead 5 20-23 repeat sub-loop 0, use ba[2:0] = 5 instead 6 24-17 repeat sub-loop 0, use ba[2:0] = 6 instead 7 28-31 repeat sub-loop 0, use ba[2:0] = 7 instead ck, ck cke sub-loop cycle number command cs ras cas we odt ba[2:0] a[15:11] a[10] a[9:7] a[6:3] a[2:0] data b) toggling static high 0 0 d10000000000 - 1d10000000000- 2d 1111 0 0 0 0 0 f 0 - 3d 1111 0 0 0 0 0 f 0 - 1 4-7 repeat sub-loop 0, but odt = 0 and ba[2:0] = 1 2 8-11 repeat sub-loop 0, but odt = 1 and ba[2:0] = 2 3 12-15 repeat sub-loop 0, but odt = 1 and ba[2:0] = 3 4 16-19 repeat sub-loop 0, but odt = 0 and ba[2:0] = 4 5 20-23 repeat sub-loop 0, but odt = 0 and ba[2:0] = 5 6 24-17 repeat sub-loop 0, but odt = 1 and ba[2:0] = 6 7 28-31 repeat sub-loop 0, but odt = 1 and ba[2:0] = 7
rev. 1.3 / dec. 2010 61 table 7 - idd4r and iddq4r measurement-loop pattern a) a) dm must be driven low all the time. dqs, dqs are used according to rd commands, otherwise mid-level. b) burst sequence driven on each dq signal by read co mmand. outside burst operation, dq signals are mid-level. table 8 - idd4w measurement-loop pattern a) a) dm must be driven low all the time. dqs, dqs are used according to wr commands, otherwise mid-level. b) burst sequence driven on each dq signal by write co mmand. outside burst operation, dq signals are mid-level. ck, ck cke sub-loop cycle number command cs ras cas we odt ba[2:0] a[15:11] a[10] a[9:7] a[6:3] a[2:0] data b) toggling static high 0 0 rd 0 1 0 1 0 0 00 0 0 0 0 00000000 1d100000000000- 2,3 d ,d 1111 0 0000 0 0 0 - 4 rd 0 1 0 1 0 0 00 0 0 f 0 00110011 5d1000000000f0- 6,7 d ,d 1111 0 0000 0 f 0 - 1 8-15 repeat sub-loop 0, but ba[2:0] = 1 2 16-23 repeat sub-loop 0, but ba[2:0] = 2 3 24-31 repeat sub-loop 0, but ba[2:0] = 3 4 32-39 repeat sub-loop 0, but ba[2:0] = 4 5 40-47 repeat sub-loop 0, but ba[2:0] = 5 6 48-55 repeat sub-loop 0, but ba[2:0] = 6 7 56-63 repeat sub-loop 0, but ba[2:0] = 7 ck, ck cke sub-loop cycle number command cs ras cas we odt ba[2:0] a[15:11] a[10] a[9:7] a[6:3] a[2:0] data b) toggling static high 0 0 wr 0 1 0 0 1 0 00 0 0 0 0 00000000 1d100010000000- 2,3 d ,d 1111 1 0000 0 0 0 - 4 wr 0 1 0 0 1 0 00 0 0 f 0 00110011 5d1000100000f0- 6,7 d ,d 1111 1 0000 0 f 0 - 1 8-15 repeat sub-loop 0, but ba[2:0] = 1 2 16-23 repeat sub-loop 0, but ba[2:0] = 2 3 24-31 repeat sub-loop 0, but ba[2:0] = 3 4 32-39 repeat sub-loop 0, but ba[2:0] = 4 5 40-47 repeat sub-loop 0, but ba[2:0] = 5 6 48-55 repeat sub-loop 0, but ba[2:0] = 6 7 56-63 repeat sub-loop 0, but ba[2:0] = 7
rev. 1.3 / dec. 2010 62 table 9 - idd5b measur ement-loop pattern a) a) dm must be driven low all the time. dqs, dqs are mid-level. b) dq signals are mid-level. ck, ck cke sub-loop cycle number command cs ras cas we odt ba[2:0] a[15:11] a[10] a[9:7] a[6:3] a[2:0] data b) toggling static high 0 0 ref 0 0 0 1 0 0 0 0 0 0 0 - 11.2 d, d 1 0 0 0 0 0 00 0 0 0 0 - 3,4 d , d 1111 0 0000 0 f 0 - 5...8 repeat cycles 1...4, but ba[2:0] = 1 9...12 repeat cycles 1...4, but ba[2:0] = 2 13...16 repeat cycles 1...4, but ba[2:0] = 3 17...20 repeat cycles 1...4, but ba[2:0] = 4 21...24 repeat cycles 1...4, but ba[2:0] = 5 25...28 repeat cycles 1...4, but ba[2:0] = 6 29...32 repeat cycles 1...4, but ba[2:0] = 7 2 33...nrfc-1 repeat sub-loop 1, until nrfc - 1. truncate, if necessary.
rev. 1.3 / dec. 2010 63 table 10 - idd7 meas urement-loop pattern a) attention! sub-loops 10-19 have inverse a[6:3] pattern and data pattern than sub-loops 0-9 a) dm must be driven low all the time. dqs, dqs are used according to rd commands, otherwise mid-level. b) burst sequence driven on each dq signal by read co mmand. outside burst operation, dq signals are mid-level. ck, ck cke sub-loop cycle number command cs ras cas we odt ba[2:0] a[15:11] a[10] a[9:7] a[6:3] a[2:0] data b) toggling static high 0 0 act 0 0 1 1 0 0 00 0 0 0 0 - 1 rda 0 1 0 1 0 0 00 1 0 0 0 00000000 2 d 1 0 0 0 0 0 00 0 0 0 0 - ... repeat above d command until nrrd - 1 1 nrrd act 0 0 1 1 0 1 00 0 0 f 0 - nrrd+1 rda 0 1 0 1 0 1 00 1 0 f 0 00110011 nrrd+2 d 1 0 0 0 0 1 00 0 0 f 0 - ... repeat above d command until 2* nrrd - 1 2 2*nrrd repeat sub-loop 0, but ba[2:0] = 2 3 3*nrrd repeat sub-loop 1, but ba[2:0] = 3 4 4*nrrd d 1 0 0 0 0 3 00 0 0 f 0 - assert and repeat abov e d command until nfaw - 1, if necessary 5 nfaw repeat sub-loop 0, but ba[2:0] = 4 6 nfaw+nrrd repeat sub-loop 1, but ba[2:0] = 5 7 nfaw+2*nrrd repeat sub-loop 0, but ba[2:0] = 6 8 nfaw+3*nrrd repeat sub-loop 1, but ba[2:0] = 7 9 nfaw+4*nrrd d 1 0 0 0 0 7 00 0 0 f 0 - assert and repeat abov e d command until 2* nfaw - 1, if necessary 10 2*nfaw+0 act 0 0 1 1 0 0 00 0 0 f 0 - 2*nfaw+1 rda 0 1 0 1 0 0 00 1 0 f 0 00110011 2&nfaw+2 d 1 0 0 0 0 0 00 0 0 f 0 - repeat above d command until 2* nfaw + nrrd - 1 11 2*nfaw+nrrd act 0 0 1 1 0 1 00 0 0 0 0 - 2*nfaw+nrrd+1 rda 0 1 0 1 0 1 00 1 0 0 0 00000000 2&nfaw+nrrd+2 d 1 0 0 0 0 1 00 0 0 0 0 - repeat above d command until 2* nfaw + 2* nrrd - 1 12 2*nfaw+2*nrrd repeat sub-loop 10, but ba[2:0] = 2 13 2*nfaw+3*nrrd repeat sub-loop 11, but ba[2:0] = 3 14 2*nfaw+4*nrrd d 1 0 0 0 0 3 00 0 0 0 0 - assert and repeat abov e d command until 3* nfaw - 1, if necessary 15 3*nfaw repeat sub-loop 10, but ba[2:0] = 4 16 3*nfaw+nrrd repeat sub-loop 11, but ba[2:0] = 5 17 3*nfaw+2*nrrd repeat sub-loop 10, but ba[2:0] = 6 18 3*nfaw+3*nrrd repeat sub-loop 11, but ba[2:0] = 7 19 3*nfaw+4*nrrd d 1 0 0 0 0 7 00 0 0 0 0 - assert and repeat abov e d command until 4* nfaw - 1, if necessary
rev. 1.3 / dec. 2010 64 idd specifications (tcase: 0 to 95 o c) * module idd values in the datasheet are only a calculation based on the component idd spec. ? the actual measurements may vary according to dq loading cap. 2gb, 256m x 72 r-dimm: hmt325r7bfr8c 4gb, 512m x 72 r-dimm: hmt351r7bfr8c symbol ddr3 1066 ddr3 1333 ddr3 1600 unit note idd0 1169 1214 1259 ma idd1 1259 1304 1349 ma idd2n 689 1034 1034 ma idd2nt 1052 1079 1124 ma idd2p0 336 336 336 ma idd2p1 363 363 363 ma idd2q 989 1034 1034 ma idd3n 1034 1079 1124 ma idd3p 363 363 363 ma idd4r 1484 1619 1709 ma idd4w 1484 1619 1754 ma idd5b 2114 2159 2294 ma idd6 336 336 336 ma idd6et 363 363 363 ma idd6tc 363 363 363 ma idd7 1754 1979 2384 ma symbol ddr3 1066 ddr3 1333 ddr3 1600 unit note idd0 1394 1484 1619 ma idd1 1484 1574 1709 ma idd2n 1214 1304 1304 ma idd2nt 1340 1394 1484 ma idd2p0 444 444 444 ma idd2p1 498 498 498 ma idd2q 1214 1304 1304 ma idd3n 1304 1394 1484 ma idd3p 498 498 498 ma idd4r 1709 1889 2069 ma idd4w 1709 1889 2114 ma idd5b 2339 2429 2654 ma idd6 444 444 444 ma idd6et 498 498 498 ma idd6tc 498 498 498 ma idd7 1979 2249 2744 ma
rev. 1.3 / dec. 2010 65 4gb, 512m x 72 r-dimm: hmt351r7bfr4c 8gb, 1g x 72 r-di mm: hmt31gr7bfr8c symbol ddr3 1066 ddr3 1333 ddr3 1600 unit note idd0 1574 1664 1754 ma idd1 1754 1844 1934 ma idd2n 1214 1304 1304 ma idd2nt 1340 1394 1484 ma idd2p0 444 444 444 ma idd2p1 498 498 498 ma idd2q 1214 1304 1304 ma idd3n 1304 1394 1484 ma idd3p 498 498 498 ma idd4r 2204 2474 2654 ma idd4w 2204 2474 2744 ma idd5b 3464 3554 3824 ma idd6 444 444 444 ma idd6et 498 498 498 ma idd6tc 498 498 498 ma idd7 2744 3194 4004 ma symbol ddr3 1066 ddr3 1333 ddr3 1600 unit note idd0 1844 2024 2339 ma idd1 1934 2114 2429 ma idd2n 1664 1844 1844 ma idd2nt 1916 2024 2204 ma idd2p0 660 660 660 ma idd2p1 768 768 768 ma idd2q 1664 1844 1844 ma idd3n 1844 2024 2204 ma idd3p 768 768 768 ma idd4r 2159 2429 2789 ma idd4w 2159 2429 2834 ma idd5b 2789 2969 3374 ma idd6 660 660 660 ma idd6et 768 768 768 ma idd6tc 768 768 768 ma idd7 2429 2789 3464 ma
rev. 1.3 / dec. 2010 66 8gb, 1g x 72 r-di mm: hmt31gr7bfr4c 16gb, 2g x 72 r-di mm: hmt42gr7bmr4c symbol ddr3 1066 ddr3 1333 ddr3 1600 unit note idd0 2024 2204 2474 ma idd1 2204 2384 2654 ma idd2n 1664 1844 1844 ma idd2nt 1916 2024 2204 ma idd2p0 660 660 660 ma idd2p1 768 768 768 ma idd2q 1664 1844 1844 ma idd3n 1844 2024 2204 ma idd3p 768 768 768 ma idd4r 2654 3014 3374 ma idd4w 2654 3014 3464 ma idd5b 3914 4094 4544 ma idd6 660 660 660 ma idd6et 768 768 768 ma idd6tc 768 768 768 ma idd7 3194 3734 4724 ma symbol ddr3 1066 ddr3 1333 ddr3 1600 unit note idd0 2924 3284 3914 ma idd1 3104 3464 4094 ma idd2n 2564 2924 2924 ma idd2nt 3068 3284 3644 ma idd2p0 1092 1092 1092 ma idd2p1 1308 1308 1308 ma idd2q 2564 2924 2924 ma idd3n 2924 3284 3644 ma idd3p 1308 1308 1308 ma idd4r 3554 4094 4814 ma idd4w 3554 4094 4904 ma idd5b 4814 5174 5984 ma idd6 1092 1092 1092 ma idd6et 1308 1308 1308 ma idd6tc 1308 1308 1308 ma idd7 4094 4814 6164 ma
rev. 1.3 / dec. 2010 67 module dimensions 256mx72 - hmt325r7bfr8c 5.175 detail c 2.10 0.15 47.00 71.00 2x3.00 0.10 front 1 30.00 9.50 17.30 120 5.0 1 1 240 121 back 133.35 128.95 registering clock driver spd / ts 4x3.00 0.10 1.27 010 mm side max 3.43mm max 0.20 2.50 0.20 1.00 0.80 0.05 detail of contacts b 1.50 0.10 detail of contacts c 0.3 0.15 0.3~0.1 5.00 3.80 2.50 2.50 0.20 3 0.1 1.20 0.15 detail of contacts a detail b detail a note : 1. tolerance on all dimensions unless otherwise stated. 0.13 ? units: millimeters
rev. 1.3 / dec. 2010 68 512mx72 - hmt351r7bfr8c 30.00 9.50 17.30 23.30 5.175 detail b detail c 2.10 0.15 47.00 71.00 2x3.00 0.10 front 1 4x3.00 0.10 120 5.0 1 1 240 121 back 133.35 128.95 registering clock driver spd / ts 1.27 010 mm side max 3.43mm max 0.20 2.50 0.20 1.00 0.80 0.05 detail of contacts b 1.50 0.10 detail of contacts c 0.3 0.15 0.3+0.1 5.00 3.80 2.50 2.50 0.20 3 0.1 1.20 0.15 detail of contacts a detail a note : 1. tolerance on all dimensions unless otherwise stated. 0.13 ? units: millimeters
rev. 1.3 / dec. 2010 69 512mx72 - hmt351r7bfr4c 4x3.00 0.10 30.00 9.50 17.30 23.30 5.175 detail b detail c 2.10 0.15 47.00 71.00 2x3.00 0.10 front 1 120 5.0 1 1 240 121 back 133.35 128.95 registering clock driver spd / ts 1.27 010 mm side max 3.43mm max 0.20 2.50 0.20 1.00 0.80 0.05 detail of contacts b 1.50 0.10 detail of contacts c 0.3 0.15 0.3~0.1 5.00 3.80 2.50 2.50 0.20 3 0.1 1.20 0.15 detail of contacts a detail a note : 1. tolerance on al l dimensions unless otherwise stated. 0.13 ? units: millimeters
rev. 1.3 / dec. 2010 70 1gx72 - hmt31gr7bfr8c 30.00 9.50 17.30 23.30 5.175 detail c detail d 2.10 0.15 47.00 71.00 2x3.00 0.10 front 1 120 5.0 1 1 240 121 back 133.35 128.95 registering clock driver spd / ts 4x3.00 0.10 1.27 010 mm side max 3.46mm max 0.20 2.50 0.20 1.00 0.80 0.05 detail of contacts c 1.50 0.10 detail of contacts d 0.3 0.15 0.3~0.1 5.00 3.80 2.50 2.50 0.20 3 0.1 1.20 0.15 0.4 13.60 14.90 detail of contacts a detail of contacts b detail b detail a note : 1. tolerance on al l dimensions unless otherwise stated. 0.13 ? units: millimeters
rev. 1.3 / dec. 2010 71 1gx72 - hmt31gr7bfr8c - heat spreader front 30.20 120 back 133.35 22.00 registering clock driver 127 121 registering clock driver 1.27 010 mm side max 7.19mm max 1 240 133.75 14.214 2.786 6.35 36.7 42.7 20.9 10 33.4 33.4 3.69 5.39 6.3 7.36 46.46 80.54 2.15 57.2 7.74 119.64 2.7 15.36 22.00 8 note : 1. tolerance on al l dimensions unless otherwise stated. 2.in order to uninstall fdhs, please contact sales administrator. 0.13 ? units: millimeters
rev. 1.3 / dec. 2010 72 1gx72 - hmt31gr7bfr4c 30.00 9.50 17.30 23.30 5.175 detail c detail d 2.10 0.15 47.00 71.00 2x3.00 0.10 front 1 120 5.0 1 1 240 121 back 133.35 128.95 registering clock driver spd / ts 4x3.00 0.10 1.27 010 mm side max 3.46mm max 0.20 2.50 0.20 1.00 0.80 0.05 detail of contacts c 1.50 0.10 detail of contacts d 0.3 0.15 0.3~0.1 5.00 3.80 2.50 2.50 0.20 3 0.1 1.20 0.15 0.4 13.60 14.90 detail of contacts a detail of contacts b detail b detail a note : 1. tolerance on al l dimensions unless otherwise stated. 0.13 ? units: millimeters
rev. 1.3 / dec. 2010 73 1gx72 - hmt31gr7bfr4c - heat spreader 121 registering clock driver 240 57.2 2.7 15.36 22.00 front 30.20 120 back 133.35 22.00 registering clock driver 127 1.27 010 mm side max 7.19mm max 1 133.75 14.214 2.786 6.35 42.7 20.9 10 33.4 33.4 3.69 5.39 6.3 7.36 46.46 80.54 2.15 7.74 119.64 8 36.7 note : 1. tolerance on all dimensions unless otherwise stated. 2.in order to uninstall fdhs, pl ease contact sales administrator. 0.13 ? units: millimeters
rev. 1.3 / dec. 2010 74 2gx72 - hmt42gr7bmr4c 30.00 9.50 17.30 23.30 5.175 detail c detail d 2.10 0.15 47.00 71.00 2x3.00 0.10 front 1 120 5.0 1 1 240 121 back 133.35 128.95 registering clock driver spd / ts registering clock driver 4x3.00 0.10 1.27 010 mm side max 3.66mm max 0.20 2.50 0.20 1.00 0.80 0.05 detail of contacts c 1.50 0.10 detail of contacts d 0.3 0.15 0.3~0.1 5.00 3.80 2.50 2.50 0.20 3 0.1 1.20 0.15 0.4 13.60 14.90 detail of contacts a detail of contacts b detail a detail b ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp ddp note : 1. tolerance on all dimensions unless otherwise stated. 0.13 ? units: millimeters
rev. 1.3 / dec. 2010 75 2gx72 - hmt42gr7bmr4c - heat spreader front 120 back 133.35 22.00 registering clock driver 127 121 registering clock driver 1.27 010 mm side max 7.35mm max 1 240 133.75 14.214 2.786 6.35 42.7 20.9 33.4 33.4 4.06 5.16 7.36 46.46 80.54 2.15 57.2 7.74 119.64 2.7 15.36 22.00 8.2 6.1 17.2 12.02 6.8 10 36.7 1.1 10.1 note : 1. tolerance on all dimensions unless otherwise stated. 2.in order to uninstall fdhs, pl ease contact sales administrator. 0.13 ? units: millimeters 30.20

▲Up To Search▲

Price & Availability of HMT351R7BFR8C-H9

	To Download HMT351R7BFR8C-H9 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .